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Title: Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

Abstract

This study investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and the charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be consideredmore » indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.« less

Authors:
 [1];  [2];  [3];  [4];  [5];  [6];  [2];  [7];  [8]
+ Show Author Affiliations
  1. Univ. of Torino, Torino (Italy)
  2. ANSTO, Kirrawee, NSW (Austria)
  3. National Univ. of Singapore (Singapore)
  4. CNA, Sevilla (Spain)
  5. Ruder Boskovic Institute, Zagreb (Croatia)
  6. Univ. of Helsinki, Helsinki (Finland)
  7. International Atomic Energy Agency, Vienna (Austria); Institute of Nuclear Research of the Hungarian Academy of Sciences (ATOMKI), Debrecen (Hungary)
  8. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
International Atomic Energy Agency
OSTI Identifier:
1238654
Report Number(s):
SAND-2015-9676J
Journal ID: ISSN 0168-583X; 607657
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Additional Journal Information:
Journal Volume: 119; Journal Issue: 50; Journal ID: ISSN 0168-583X
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; DIB; damaging ion beam; PIB; probing ion beam; IBIC; ion beam induced charge; NIEL; non-ionizing energy loss; CCE; charge collection efficiency

Citation Formats

Vittone, Ettore, Pastuovic, Zeljko, Breese, Mark B. H., Lopez, Javier Garicia, Jaksic, Milko, Raisanen, Jyrki, Siegele, Rainer, Simon, Aliz, and Vizkelethy, Gyorgy. Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment. United States: N. p., 2016. Web. doi:10.1016/j.nimb.2016.01.030.
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Vittone, Ettore, Pastuovic, Zeljko, Breese, Mark B. H., Lopez, Javier Garicia, Jaksic, Milko, Raisanen, Jyrki, Siegele, Rainer, Simon, Aliz, & Vizkelethy, Gyorgy. Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment. United States. https://doi.org/10.1016/j.nimb.2016.01.030
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Vittone, Ettore, Pastuovic, Zeljko, Breese, Mark B. H., Lopez, Javier Garicia, Jaksic, Milko, Raisanen, Jyrki, Siegele, Rainer, Simon, Aliz, and Vizkelethy, Gyorgy. Mon . "Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment". United States. https://doi.org/10.1016/j.nimb.2016.01.030. https://www.osti.gov/servlets/purl/1238654.
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@article{osti_1238654,
title = {Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment},
author = {Vittone, Ettore and Pastuovic, Zeljko and Breese, Mark B. H. and Lopez, Javier Garicia and Jaksic, Milko and Raisanen, Jyrki and Siegele, Rainer and Simon, Aliz and Vizkelethy, Gyorgy},
abstractNote = {This study investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and the charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.},
doi = {10.1016/j.nimb.2016.01.030},
journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},
number = 50,
volume = 119,
place = {United States},
year = {Mon Feb 08 00:00:00 EST 2016},
month = {Mon Feb 08 00:00:00 EST 2016}
}
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