Low-temperature fabrication of efficient wide-bandgap organolead trihalide perovskite solar cells
Abstract
A mixed halide perovskite solar cell with a 1.72 eV bandgap is developed by incorporating Br into perovskite through a low-temperature solution process. A high efficiency of 13.1% is achieved by carefully tuning the thickness, morphology, and surface passivation of the perovskite layers. Furthermore, the fabrication techniques and conditions are compatible with future perovskite/Si tandem cell studies.
- Authors:
-
- Univ. of Nebraska, Lincoln, NE (United States)
- Publication Date:
- Research Org.:
- Univ. of Nebraska, Lincoln, NE (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1237998
- Grant/Contract Number:
- EE0006709
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Energy Materials
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 6; Journal ID: ISSN 1614-6832
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE
Citation Formats
Bi, Cheng, Yuan, Yongbo, Fang, Yanjun, and Huang, Jinsong. Low-temperature fabrication of efficient wide-bandgap organolead trihalide perovskite solar cells. United States: N. p., 2014.
Web. doi:10.1002/aenm.201401616.
Bi, Cheng, Yuan, Yongbo, Fang, Yanjun, & Huang, Jinsong. Low-temperature fabrication of efficient wide-bandgap organolead trihalide perovskite solar cells. United States. https://doi.org/10.1002/aenm.201401616
Bi, Cheng, Yuan, Yongbo, Fang, Yanjun, and Huang, Jinsong. Tue .
"Low-temperature fabrication of efficient wide-bandgap organolead trihalide perovskite solar cells". United States. https://doi.org/10.1002/aenm.201401616. https://www.osti.gov/servlets/purl/1237998.
@article{osti_1237998,
title = {Low-temperature fabrication of efficient wide-bandgap organolead trihalide perovskite solar cells},
author = {Bi, Cheng and Yuan, Yongbo and Fang, Yanjun and Huang, Jinsong},
abstractNote = {A mixed halide perovskite solar cell with a 1.72 eV bandgap is developed by incorporating Br into perovskite through a low-temperature solution process. A high efficiency of 13.1% is achieved by carefully tuning the thickness, morphology, and surface passivation of the perovskite layers. Furthermore, the fabrication techniques and conditions are compatible with future perovskite/Si tandem cell studies.},
doi = {10.1002/aenm.201401616},
journal = {Advanced Energy Materials},
number = 6,
volume = 5,
place = {United States},
year = {Tue Nov 25 00:00:00 EST 2014},
month = {Tue Nov 25 00:00:00 EST 2014}
}
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