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Title: Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors

In this paper, we present a fully-coupled electrical and thermal transport model for oxide memristors that solves simultaneously the time-dependent continuity equations for all relevant carriers, together with the time-dependent heat equation including Joule heating sources. The model captures all the important processes that drive memristive switching and is applicable to simulate switching behavior in a wide range of oxide memristors. The model is applied to simulate the ON switching in a 3D filamentary TaOx memristor. Simulation results show that, for uniform vacancy density in the OFF state, vacancies fill in the conduction filament till saturation, and then fill out a gap formed in the Ta electrode during ON switching; furthermore, ON-switching time strongly depends on applied voltage and the ON-to-OFF current ratio is sensitive to the filament vacancy density in the OFF state.
Authors:
 [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
OSTI Identifier:
1237669
Report Number(s):
SAND--2015-5520J
Journal ID: ISSN 1938-6737; 594850
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
ECS Transactions (Online)
Additional Journal Information:
Journal Name: ECS Transactions (Online); Journal Volume: 69; Journal Issue: 5; Journal ID: ISSN 1938-6737
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS