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Title: Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs

In this study, we present experimental evidence of single electron-induced upsets in commercial 28 nm and 45 nm CMOS SRAMs from a monoenergetic electron beam. Upsets were observed in both technology nodes when the SRAM was operated in a low power state. The experimental cross section depends strongly on both bias and technology node feature size, consistent with previous work in which SRAMs were irradiated with low energy muons and protons. Accompanying simulations demonstrate that δ-rays produced by the primary electrons are responsible for the observed upsets. Additional simulations predict the on-orbit event rates for various Earth and Jovian environments for a set of sensitive volumes representative of current technology nodes. The electron contribution to the total upset rate for Earth environments is significant for critical charges as high as 0.2 fC. This value is comparable to that of sub-22 nm bulk SRAMs. Similarly, for the Jovian environment, the electron-induced upset rate is larger than the proton-induced upset rate for critical charges as high as 0.3 fC.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [3] ;  [3] ;  [4] ;  [1] ;  [5] ;  [5] ;  [1]
  1. Vanderbilt Univ., Nashville, TN (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Broadcom, Irvine, CA (United States)
  4. Texas Instruments, Inc., Dallas, TX (United States)
  5. Arnold Engineering and Development Complex, Tullahoma, TN (United States)
Publication Date:
OSTI Identifier:
1237662
Report Number(s):
SAND--2015-5314J
Journal ID: ISSN 0018-9499; 594551
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 62; Journal Issue: 6; Journal ID: ISSN 0018-9499
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY