Enhanced conversion efficiency in wide-bandgap GaNP solar cells
Abstract
In this study, we demonstrate –2.05 eV dilute nitride GaNP solar cells on GaP substrates for potential use as the top junction in dual-junction integrated cells on Si. By adding a small amount of N into indirect-bandgap GaP, GaNP has several extremely important attributes: a direct-bandgap that is also tunable, and easily attained lattice-match with Si. Our best GaNP solar cell ([N] –1.8%, Eg –2.05 eV) achieves an efficiency of 7.9%, even in the absence of a window layer. This GaNP solar cell's efficiency is 3× higher than the most efficient GaP solar cell to date and higher than other solar cells with similar direct bandgap (InGaP, GaAsP). Through a systematic study of the structural, electrical, and optical properties of the device, efficient broadband optical absorption and enhanced solar cell performance are demonstrated.
- Authors:
-
- Univ. of California, San Diego, La Jolla, CA (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1236231
- Alternate Identifier(s):
- OSTI ID: 1420525
- Report Number(s):
- SAND-2015-6907J
Journal ID: ISSN 0003-6951; APPLAB; 599097
- Grant/Contract Number:
- AC04-94AL85000; AC52-06NA25396
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 107; Journal Issue: 15; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; III-V semiconductors; band gap; interface structure; diffusion; antireflective coatings
Citation Formats
Sukrittanon, Supanee, Liu, Ren, Ro, Yun Goo, Pan, Janet L., Jungjohann, Katherine Leigh, Tu, Charles W., and Dayeh, Shadi A. Enhanced conversion efficiency in wide-bandgap GaNP solar cells. United States: N. p., 2015.
Web. doi:10.1063/1.4933317.
Sukrittanon, Supanee, Liu, Ren, Ro, Yun Goo, Pan, Janet L., Jungjohann, Katherine Leigh, Tu, Charles W., & Dayeh, Shadi A. Enhanced conversion efficiency in wide-bandgap GaNP solar cells. United States. https://doi.org/10.1063/1.4933317
Sukrittanon, Supanee, Liu, Ren, Ro, Yun Goo, Pan, Janet L., Jungjohann, Katherine Leigh, Tu, Charles W., and Dayeh, Shadi A. Mon .
"Enhanced conversion efficiency in wide-bandgap GaNP solar cells". United States. https://doi.org/10.1063/1.4933317. https://www.osti.gov/servlets/purl/1236231.
@article{osti_1236231,
title = {Enhanced conversion efficiency in wide-bandgap GaNP solar cells},
author = {Sukrittanon, Supanee and Liu, Ren and Ro, Yun Goo and Pan, Janet L. and Jungjohann, Katherine Leigh and Tu, Charles W. and Dayeh, Shadi A.},
abstractNote = {In this study, we demonstrate –2.05 eV dilute nitride GaNP solar cells on GaP substrates for potential use as the top junction in dual-junction integrated cells on Si. By adding a small amount of N into indirect-bandgap GaP, GaNP has several extremely important attributes: a direct-bandgap that is also tunable, and easily attained lattice-match with Si. Our best GaNP solar cell ([N] –1.8%, Eg –2.05 eV) achieves an efficiency of 7.9%, even in the absence of a window layer. This GaNP solar cell's efficiency is 3× higher than the most efficient GaP solar cell to date and higher than other solar cells with similar direct bandgap (InGaP, GaAsP). Through a systematic study of the structural, electrical, and optical properties of the device, efficient broadband optical absorption and enhanced solar cell performance are demonstrated.},
doi = {10.1063/1.4933317},
journal = {Applied Physics Letters},
number = 15,
volume = 107,
place = {United States},
year = {Mon Oct 12 00:00:00 EDT 2015},
month = {Mon Oct 12 00:00:00 EDT 2015}
}
Web of Science
Works referenced in this record:
Growth and characterization of GaP/GaNP core/shell nanowires
journal, May 2013
- Sukrittanon, Supanee; Tu, Charles W.
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 31, Issue 3
Formation of grown-in defects in molecular beam epitaxial Ga(In)NP: Effects of growth conditions and postgrowth treatments
journal, March 2008
- Dagnelund, D.; Buyanova, I. A.; Wang, X. J.
- Journal of Applied Physics, Vol. 103, Issue 6
Effects of rapid thermal annealing on optical quality of GaNP alloys
journal, October 2004
- Izadifard, M.; Yonezu, H.; Wakahara, A.
- IEE Proceedings - Optoelectronics, Vol. 151, Issue 5
Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy
journal, February 2015
- Vaisman, M.; Tomasulo, S.; Masuda, T.
- Applied Physics Letters, Vol. 106, Issue 6
Simulation assisted design of a gallium phosphide n–p photovoltaic junction
journal, May 2010
- Allen, Charles R.; Jeon, Jong-Hyeok; Woodall, Jerry M.
- Solar Energy Materials and Solar Cells, Vol. 94, Issue 5
Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition
journal, April 2013
- Grassman, T. J.; Carlin, J. A.; Galiana, B.
- Applied Physics Letters, Vol. 102, Issue 14
Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy
journal, June 2009
- Grassman, T. J.; Brenner, M. R.; Rajagopalan, S.
- Applied Physics Letters, Vol. 94, Issue 23
Growth of GaN x As y P 1−x−y alloys on GaP(100) by gas-source molecular beam epitaxy
journal, March 2012
- Sinha, Sunil K.; Tu, Charles Wuching
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 30, Issue 2
Materials fundamentals of molecular beam epitaxy. By Jeffrey Y. Tsao, Academic Press, London 1992, softcover, 301 pp., £ 49,94, ISBN 0-12-701625-2
journal, October 1993
- Joyce, Bruce A.
- Advanced Materials, Vol. 5, Issue 10
Metamorphic 2.1-2.2 eV InGaP solar cells on GaP substrates
journal, April 2014
- Tomasulo, S.; Nay Yaung, K.; Faucher, J.
- Applied Physics Letters, Vol. 104, Issue 17
Comparison of GaAsP solar cells on GaP and GaP/Si
journal, August 2013
- Lang, Jordan R.; Faucher, Joseph; Tomasulo, Stephanie
- Applied Physics Letters, Vol. 103, Issue 9
Effects of nitrogen on the band structure of GaNxP1−x alloys
journal, March 2000
- Xin, H. P.; Tu, C. W.; Zhang, Yong
- Applied Physics Letters, Vol. 76, Issue 10
Time-resolved studies of photoluminescence in GaNxP1−x alloys: Evidence for indirect-direct band gap crossover
journal, July 2002
- Buyanova, I. A.; Pozina, G.; Bergman, J. P.
- Applied Physics Letters, Vol. 81, Issue 1
Growth and characterization of dilute nitride GaN x P 1−x nanowires and GaN x P 1−x /GaN y P 1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy
journal, August 2014
- Sukrittanon, S.; Dobrovolsky, A.; Kang, Won-Mo
- Applied Physics Letters, Vol. 105, Issue 7
Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy
journal, January 2012
- Sukrittanon, S.; Tu, C. W.
- Applied Physics Letters, Vol. 100, Issue 5
GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell
conference, April 2015
- Da Silva, M.; Almosni, S.; Cornet, C.
- SPIE OPTO, SPIE Proceedings
Band anticrossing in highly mismatched III V semiconductor alloys
journal, July 2002
- Wu, J.; Shan, W.; Walukiewicz, W.
- Semiconductor Science and Technology, Vol. 17, Issue 8
Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors
journal, September 2012
- Tan, S. L.; Hunter, C. J.; Zhang, S.
- Journal of Electronic Materials, Vol. 41, Issue 12
N incorporation in GaP and band gap bowing of GaN x P 1− x
journal, December 1996
- Bi, W. G.; Tu, C. W.
- Applied Physics Letters, Vol. 69, Issue 24
The Absorption Spectrum of Gallium Phosphide between 2 and 3 eV
journal, January 1966
- Subashiev, V. K.; Chalikyan, G. A.
- physica status solidi (b), Vol. 13, Issue 2
Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition
journal, June 1995
- Deshpande, Sadanand V.; Gulari, Erdogan; Brown, Steven W.
- Journal of Applied Physics, Vol. 77, Issue 12
Results of a gallium phosphide photovoltaic junction with an AR coating under concentration of natural sunlight
journal, September 2011
- Allen, C. R.; Woodall, J. M.; Jeon, J. -H.
- Solar Energy Materials and Solar Cells, Vol. 95, Issue 9
Nature of the fundamental band gap in GaNxP1−x alloys
journal, May 2000
- Shan, W.; Walukiewicz, W.; Yu, K. M.
- Applied Physics Letters, Vol. 76, Issue 22
GaAsP solar cells on GaP substrates by molecular beam epitaxy
journal, July 2012
- Tomasulo, S.; Nay Yaung, K.; Simon, J.
- Applied Physics Letters, Vol. 101, Issue 3
Improving GaP Solar Cell Performance by Passivating the Surface Using AlxGa1-xP Epi-Layer
journal, May 2013
- Lu, Xuesong; Hao, Ruiying; Diaz, Martin
- IEEE Journal of the Electron Devices Society, Vol. 1, Issue 5
Wide Band Gap Gallium Phosphide Solar Cells
journal, April 2012
- Lu, Xuesong; Huang, Susan; Diaz, Martin B.
- IEEE Journal of Photovoltaics, Vol. 2, Issue 2
Temperature behavior of the GaNP band gap energy
journal, March 2003
- Rudko, G. Yu.; Buyanova, I. A.; Chen, W. M.
- Solid-State Electronics, Vol. 47, Issue 3
Theory of electronic structure evolution in GaAsN and GaPN alloys
journal, August 2001
- Kent, P. R. C.; Zunger, Alex
- Physical Review B, Vol. 64, Issue 11
MOCVD-Grown GaP/Si Subcells for Integrated III–V/Si Multijunction Photovoltaics
journal, May 2014
- Grassman, T. J.; Carlin, J. A.; Galiana, B.
- IEEE Journal of Photovoltaics, Vol. 4, Issue 3
Intrinsic Doping: A New Approach for n -Type Modulation Doping in InP-Based Heterostructures
journal, September 1996
- Chen, W. M.; Buyanova, I. A.; Buyanov, A. V.
- Physical Review Letters, Vol. 77, Issue 13
Works referencing / citing this record:
Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current
journal, August 2016
- Sukrittanon, Supanee; Liu, Ren; Breeden, Michael C.
- Journal of Applied Physics, Vol. 120, Issue 5
Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes
journal, September 2019
- Alburaih, H. A.; Albalawi, H.; Henini, M.
- Semiconductor Science and Technology, Vol. 34, Issue 10