Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

Abstract

We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

Authors:
 [1];  [1];  [1];  [1];  [1]
+ Show Author Affiliations
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1236214
Report Number(s):
SAND-2015-9785J
Journal ID: ISSN 1882-0778; 607740
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Express
Additional Journal Information:
Journal Volume: 8; Journal Issue: 11; Journal ID: ISSN 1882-0778
Publisher:
Japan Society of Applied Physics
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Crawford, Mary H., Allerman, Andrew A., Armstrong, Andrew M., Smith, Michael L., and Cross, Karen C. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates. United States: N. p., 2015. Web. doi:10.7567/APEX.8.112702.
Copy to clipboard
Crawford, Mary H., Allerman, Andrew A., Armstrong, Andrew M., Smith, Michael L., & Cross, Karen C. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates. United States. https://doi.org/10.7567/APEX.8.112702
Copy to clipboard
Crawford, Mary H., Allerman, Andrew A., Armstrong, Andrew M., Smith, Michael L., and Cross, Karen C. Fri . "Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates". United States. https://doi.org/10.7567/APEX.8.112702. https://www.osti.gov/servlets/purl/1236214.
Copy to clipboard
@article{osti_1236214,
title = {Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates},
author = {Crawford, Mary H. and Allerman, Andrew A. and Armstrong, Andrew M. and Smith, Michael L. and Cross, Karen C.},
abstractNote = {We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.},
doi = {10.7567/APEX.8.112702},
journal = {Applied Physics Express},
number = 11,
volume = 8,
place = {United States},
year = {Fri Oct 30 00:00:00 EDT 2015},
month = {Fri Oct 30 00:00:00 EDT 2015}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.7567/APEX.8.112702
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 14 works
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

UV laser diode with 350.9-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology
journal, September 2005

  • Kamiyama, S.; Iida, K.; Kawashima, T.
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 11, Issue 5
  • DOI: 10.1109/JSTQE.2005.853743

The current status of ultraviolet laser diodes: The current status of ultraviolet laser diodes
journal, May 2011

  • Yoshida, Harumasa; Kuwabara, Masakazu; Yamashita, Yoji
  • physica status solidi (a), Vol. 208, Issue 7
  • DOI: 10.1002/pssa.201000870

High efficiency GaN-based LEDs and lasers on SiC
journal, December 2004

365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
journal, November 2003

  • Masui, Shingo; Matsuyama, Yuji; Yanamoto, Tomoya
  • Japanese Journal of Applied Physics, Vol. 42, Issue Part 2, No. 11A
  • DOI: 10.1143/JJAP.42.L1318

Ultraviolet AlGaN multiple-quantum-well laser diodes
journal, June 2003

  • Kneissl, Michael; Treat, David W.; Teepe, Mark
  • Applied Physics Letters, Vol. 82, Issue 25
  • DOI: 10.1063/1.1585135

An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band
journal, July 2015

  • Zhao, S.; Liu, X.; Woo, S. Y.
  • Applied Physics Letters, Vol. 107, Issue 4
  • DOI: 10.1063/1.4927602

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
journal, December 2000

Mass transport and the reduction of threading dislocation in GaN
journal, June 2000

Comparison of the simulation and experiments of the nitride-based UV light emitting diodes
conference, February 2007

  • Iida, K.; Watanabe, H.; Takeda, K.
  • Integrated Optoelectronic Devices 2007, SPIE Proceedings
  • DOI: 10.1117/12.717174

Low dislocation density AlGaN epilayers by epitaxial overgrowth of patterned templates
journal, February 2014

Fabrication of UV devices on various plane substrates
conference, April 2005

  • Iwaya, Motoaki; Kawashima, Takeshi; Iida, Kazuyoshi
  • Integrated Optoelectronic Devices 2005, SPIE Proceedings
  • DOI: 10.1117/12.597124

Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
journal, June 2005

  • Lee, S. R.; West, A. M.; Allerman, A. A.
  • Applied Physics Letters, Vol. 86, Issue 24
  • DOI: 10.1063/1.1947367

Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes
journal, January 2009

  • Miller, M. A.; Crawford, M. H.; Allerman, A. A.
  • Journal of Electronic Materials, Vol. 38, Issue 4
  • DOI: 10.1007/s11664-009-0670-1

Optically pumped InGaN/GaN lasers with wet-etched facets
journal, December 2000

  • Stocker, D. A.; Schubert, E. F.; Redwing, J. M.
  • Applied Physics Letters, Vol. 77, Issue 26
  • DOI: 10.1063/1.1333689

Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire
journal, October 2009

  • Wang, Q.; Gong, Y. P.; Zhang, J. F.
  • Applied Physics Letters, Vol. 95, Issue 16
  • DOI: 10.1063/1.3253416

Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
journal, October 2014

  • Li, Xiao-Hang; Detchprohm, Theeradetch; Kao, Tsung-Ting
  • Applied Physics Letters, Vol. 105, Issue 14
  • DOI: 10.1063/1.4897527

Unique optical properties of AlGaN alloys and related ultraviolet emitters
journal, June 2004

  • Nam, K. B.; Li, J.; Nakarmi, M. L.
  • Applied Physics Letters, Vol. 84, Issue 25
  • DOI: 10.1063/1.1765208

Highly stable temperature characteristics of InGaN blue laser diodes
journal, July 2006

  • Ryu, H. Y.; Ha, K. H.; Lee, S. N.
  • Applied Physics Letters, Vol. 89, Issue 3
  • DOI: 10.1063/1.2234738

Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys
journal, March 2009

  • Nakarmi, M. L.; Nepal, N.; Lin, J. Y.
  • Applied Physics Letters, Vol. 94, Issue 9, Article No. 091903
  • DOI: 10.1063/1.3094754
    Sort by:
    [ × clear filter / sort ]

    Works referencing / citing this record:

    MOVPE Growth of Smooth and Homogeneous Al 0.8 Ga 0.2 N:Si Superlattices as UVC Laser Cladding Layers
    journal, April 2018

    • Kuhn, Christian; Simoneit, Tino; Martens, Martin
    • physica status solidi (a), Vol. 215, Issue 13
    • DOI: 10.1002/pssa.201800005

    On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures
    journal, January 2017

    • Tran, Nhung Hong; Le, Binh Huy; Zhao, Songrui
    • Applied Physics Letters, Vol. 110, Issue 3
    • DOI: 10.1063/1.4973999

    Influence of waveguide strain and surface morphology on AlGaN-based deep UV laser characteristics
    journal, September 2018

    • Kuhn, Christian; Martens, Martin; Mehnke, Frank
    • Journal of Physics D: Applied Physics, Vol. 51, Issue 41
    • DOI: 10.1088/1361-6463/aadb84
      Sort by:
      [ × clear filter / sort ]

      Similar Records in DOE PAGES and OSTI.GOV collections: