Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection
- Authors:
-
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1235974
- Grant/Contract Number:
- 12-3834
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 4; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Chava, Venkata S. N., Omar, Sabih U., Brown, Gabriel, Shetu, Shamaita S., Andrews, J., Sudarshan, T. S., and Chandrashekhar, M. V. S. Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection. United States: N. p., 2016.
Web. doi:10.1063/1.4940385.
Chava, Venkata S. N., Omar, Sabih U., Brown, Gabriel, Shetu, Shamaita S., Andrews, J., Sudarshan, T. S., & Chandrashekhar, M. V. S. Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection. United States. https://doi.org/10.1063/1.4940385
Chava, Venkata S. N., Omar, Sabih U., Brown, Gabriel, Shetu, Shamaita S., Andrews, J., Sudarshan, T. S., and Chandrashekhar, M. V. S. Tue .
"Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection". United States. https://doi.org/10.1063/1.4940385.
@article{osti_1235974,
title = {Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection},
author = {Chava, Venkata S. N. and Omar, Sabih U. and Brown, Gabriel and Shetu, Shamaita S. and Andrews, J. and Sudarshan, T. S. and Chandrashekhar, M. V. S.},
abstractNote = {},
doi = {10.1063/1.4940385},
journal = {Applied Physics Letters},
number = 4,
volume = 108,
place = {United States},
year = {Tue Jan 26 00:00:00 EST 2016},
month = {Tue Jan 26 00:00:00 EST 2016}
}
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https://doi.org/10.1063/1.4940385
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Cited by: 19 works
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