Biased doped silicene as a way to tune electronic conduction
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Nuclear Energy (NE), Nuclear Fuel Cycle and Supply Chain
- OSTI Identifier:
- 1235629
- Grant/Contract Number:
- PTDC/FIS/120055/2010
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review. B
- Additional Journal Information:
- Journal Name: Physical Review. B Journal Volume: 93 Journal Issue: 4; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Pogorelov, Y. G., and Loktev, V. M. Biased doped silicene as a way to tune electronic conduction. United States: N. p., 2016.
Web. doi:10.1103/PhysRevB.93.045117.
Pogorelov, Y. G., & Loktev, V. M. Biased doped silicene as a way to tune electronic conduction. United States. https://doi.org/10.1103/PhysRevB.93.045117
Pogorelov, Y. G., and Loktev, V. M. Fri .
"Biased doped silicene as a way to tune electronic conduction". United States. https://doi.org/10.1103/PhysRevB.93.045117.
@article{osti_1235629,
title = {Biased doped silicene as a way to tune electronic conduction},
author = {Pogorelov, Y. G. and Loktev, V. M.},
abstractNote = {},
doi = {10.1103/PhysRevB.93.045117},
journal = {Physical Review. B},
number = 4,
volume = 93,
place = {United States},
year = {Fri Jan 15 00:00:00 EST 2016},
month = {Fri Jan 15 00:00:00 EST 2016}
}
Free Publicly Available Full Text
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https://doi.org/10.1103/PhysRevB.93.045117
https://doi.org/10.1103/PhysRevB.93.045117
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Cited by: 8 works
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