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This content will become publicly available on January 21, 2017

Title: Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early stage photovoltaic material

Authors:
 [1] ;  [2] ;  [1] ;  [1] ;  [3] ;  [1] ;  [1] ;  [4] ;  [3] ;  [1]
  1. Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  2. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
  3. Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA
  4. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA, Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA, PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
Publication Date:
OSTI Identifier:
1235491
Grant/Contract Number:
EE0005329; FG02-00ER15087
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 3; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English