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Title: Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices

Minority carrier lifetimes in very long wavelength infrared (VLWIR) InAs/GaInSb superlattices (SLs) are reported using time-resolved microwave reflectance measurements. A strain-balanced ternary SL absorber layer of 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb, corresponding to a bandgap of ~50 meV, is found to have a minority carrier lifetime of 140 ± 20 ns at ~18 K. This lifetime is extraordinarily long, when compared to lifetime values previously reported for other VLWIR SL detector materials. As a result, this enhancement is attributed to the strain-engineered ternary design, which offers a variety of epitaxial advantages and ultimately leads to a reduction of defect-mediated recombination centers.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Wright-Patterson Air Force Base, Ohio (United States)
Publication Date:
OSTI Identifier:
1235314
Report Number(s):
SAND--2015-4640J
Journal ID: ISSN 0003-6951; APPLAB; 590730
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 13; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
sonoluminescence; carrier lifetimes; superlattices; III-V semiconductors; band gap