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Title: Mechanical flip-chip for ultra-high electron mobility devices

Abstract

In this study, electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. This approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.

Authors:
 [1];  [1];  [1];  [2];  [3];  [3];  [4];  [4];  [1]
+ Show Author Affiliations
  1. McGill Univ., Montreal, QC (Canada)
  2. McGill Univ., Montreal, QC (Canada); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  4. Princeton Univ., Princeton, NJ (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1235312
Report Number(s):
SAND-2015-1552J
Journal ID: ISSN 2045-2322; 567371
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 5; Journal Issue: C; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; condensed-matter physics; electronics; photonics and device physics

Citation Formats

Bennaceur, Keyan, Schmidt, Benjamin A., Gaucher, Samuel, Laroche, Dominique, Lilly, Michael P., Reno, John L., West, Ken W., Pfeiffer, Loren N., and Gervais, Guillaume. Mechanical flip-chip for ultra-high electron mobility devices. United States: N. p., 2015. Web. doi:10.1038/srep13494.
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Bennaceur, Keyan, Schmidt, Benjamin A., Gaucher, Samuel, Laroche, Dominique, Lilly, Michael P., Reno, John L., West, Ken W., Pfeiffer, Loren N., & Gervais, Guillaume. Mechanical flip-chip for ultra-high electron mobility devices. United States. https://doi.org/10.1038/srep13494
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Bennaceur, Keyan, Schmidt, Benjamin A., Gaucher, Samuel, Laroche, Dominique, Lilly, Michael P., Reno, John L., West, Ken W., Pfeiffer, Loren N., and Gervais, Guillaume. Tue . "Mechanical flip-chip for ultra-high electron mobility devices". United States. https://doi.org/10.1038/srep13494. https://www.osti.gov/servlets/purl/1235312.
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@article{osti_1235312,
title = {Mechanical flip-chip for ultra-high electron mobility devices},
author = {Bennaceur, Keyan and Schmidt, Benjamin A. and Gaucher, Samuel and Laroche, Dominique and Lilly, Michael P. and Reno, John L. and West, Ken W. and Pfeiffer, Loren N. and Gervais, Guillaume},
abstractNote = {In this study, electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. This approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.},
doi = {10.1038/srep13494},
journal = {Scientific Reports},
number = C,
volume = 5,
place = {United States},
year = {Tue Sep 22 00:00:00 EDT 2015},
month = {Tue Sep 22 00:00:00 EDT 2015}
}
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https://doi.org/10.1038/srep13494
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Works referenced in this record:

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journal, July 2007

  • Miller, Jeffrey B.; Radu, Iuliana P.; Zumbühl, Dominik M.
  • Nature Physics, Vol. 3, Issue 8
  • DOI: 10.1038/nphys658

Length scaling of bandwidth and noise in hot‐electron superconducting mixers
journal, June 1996

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Role of interactions in an electronic Fabry-Perot interferometer operating in the quantum Hall effect regime
journal, March 2010

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    Works referencing / citing this record:

    Split-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures
    journal, April 2017

    Flip-chip gate-tunable acoustoelectric effect in graphene
    journal, November 2018

    • Lane, J. R.; Zhang, L.; Khasawneh, M. A.
    • Journal of Applied Physics, Vol. 124, Issue 19
    • DOI: 10.1063/1.5047211

    Split-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures
    journal, April 2017

    Topology in two-dimensional systems
    text, January 2016

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