Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure

Laroche, Dominique; Huang, ShiHsien; Nielsen, Erik; Liu, Chee Wee; Li, Jiun -Yun; Lu, Tzu -Ming

doi:10.1063/1.4917296

Title: Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure

Abstract

We report the design, the fabrication, and the magneto-transport study of an electron bilayer system embedded in an undoped Si/SiGe double-quantum-well heterostructure. Additionally, the combined Hall densities (n _Hall ) ranging from 2.6 × 10¹⁰ cm^-2 to 2.7 × 10¹¹ cm^-2 were achieved, yielding a maximal combined Hall mobility (μ_Hall) of 7.7 × 10⁵ cm²/(V • s) at the highest density. Simultaneous electron population of both quantum wells is clearly observed through a Hall mobility drop as the Hall density is increased to n_Hall> 3.3 × 10¹⁰cm^-2, consistent with Schrödinger-Poisson simulations. Furthermore, the integer and fractional quantum Hall effects are observed in the device, and single-layer behavior is observed when both layers have comparable densities, either due to spontaneous interlayer coherence or to the symmetric-antisymmetric gap.

Authors:

Laroche, Dominique ^[1]; Huang, ShiHsien ^[2]; Nielsen, Erik ^[1]; Liu, Chee Wee ^[2]; Li, Jiun -Yun ^[2]; Lu, Tzu -Ming ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
National Taiwan Univ., Taipei (Taiwan); National Nano Device Lab., Hsinchu (Taiwan)

Publication Date:: Wed Apr 08 00:00:00 EDT 2015

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1235261

Alternate Identifier(s):: OSTI ID: 1420457

Report Number(s):: SAND-2015-2479J
Journal ID: ISSN 0003-6951; 579779

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 106; Journal Issue: 14; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Laroche, Dominique, Huang, ShiHsien, Nielsen, Erik, Liu, Chee Wee, Li, Jiun -Yun, and Lu, Tzu -Ming. Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure.  United States: N. p., 2015. 
Web.  doi:10.1063/1.4917296.

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                    Laroche, Dominique, Huang, ShiHsien, Nielsen, Erik, Liu, Chee Wee, Li, Jiun -Yun, & Lu, Tzu -Ming. Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure.  United States.  https://doi.org/10.1063/1.4917296

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                    Laroche, Dominique, Huang, ShiHsien, Nielsen, Erik, Liu, Chee Wee, Li, Jiun -Yun, and Lu, Tzu -Ming. Wed .  
"Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure".  United States.  https://doi.org/10.1063/1.4917296.  https://www.osti.gov/servlets/purl/1235261.

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@article{osti_1235261,

  title        = {Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure},

  author       = {Laroche, Dominique and Huang, ShiHsien and Nielsen, Erik and Liu, Chee Wee and Li, Jiun -Yun and Lu, Tzu -Ming},

  abstractNote = {We report the design, the fabrication, and the magneto-transport study of an electron bilayer system embedded in an undoped Si/SiGe double-quantum-well heterostructure. Additionally, the combined Hall densities (n Hall ) ranging from 2.6 × 1010 cm-2 to 2.7 × 1011 cm-2 were achieved, yielding a maximal combined Hall mobility (μHall ) of 7.7 × 105 cm2/(V • s) at the highest density. Simultaneous electron population of both quantum wells is clearly observed through a Hall mobility drop as the Hall density is increased to nHall > 3.3 × 1010 cm-2, consistent with Schrödinger-Poisson simulations. Furthermore, the integer and fractional quantum Hall effects are observed in the device, and single-layer behavior is observed when both layers have comparable densities, either due to spontaneous interlayer coherence or to the symmetric-antisymmetric gap.},

  doi          = {10.1063/1.4917296},

  journal      = {Applied Physics Letters},

  number       = 14,

  volume       = 106,

  place        = {United States},

  year         = {Wed Apr 08 00:00:00 EDT 2015},

  month        = {Wed Apr 08 00:00:00 EDT 2015}

}

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Title: Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure

Abstract

Citation Formats

Pseudospin Quantum Computation in Semiconductor Nanostructures journal, October 2003

Anisotropy of g-factor and electron spin resonance linewidth in modulation doped SiGe quantum wells journal, September 2004

Integer quantum Hall states in coupled double electron gas systems at mismatched carrier densities journal, May 1996

New fractional quantum Hall state in double-layer two-dimensional electron systems journal, March 1992

Exciton condensation and perfect Coulomb drag journal, August 2012

Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors journal, March 2012

High-performance strained Si/SiGe pMOS devices with multiple quantum wells journal, December 2002

Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors journal, May 2006

A one-dimensional SiGe superlattice grown by UHV epitaxy journal, November 1975

Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors journal, October 2011

High-mobility Si and Ge structures journal, December 1997

Analysis of retrograded double quantum well p-type MOSFET journal, September 1998

Quantum-Hall quantum bits journal, October 2002

Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures journal, July 2012

Design and fabrication of a SiGe double quantum well structure for g-factor tuning journal, May 2006

Evidence for a Finite-Temperature Phase Transition in a Bilayer Quantum Hall System journal, March 2008

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Fractional quantum Hall effect in bilayer two-dimensional hole-gas systems journal, August 1996

Vanishing Hall Resistance at High Magnetic Field in a Double-Layer Two-Dimensional Electron System journal, July 2004

Valley splitting of Si ∕ Si 1 − x Ge x heterostructures in tilted magnetic fields journal, April 2006

Observation of intersubband scattering in a 2-dimensional electron system journal, March 1982

Role of Density Imbalance in an Interacting Bilayer Hole System journal, August 2003

Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs journal, May 2009

Magnetic-field-driven destruction of quantum Hall states in a double quantum well journal, April 1990

Photoluminescence and magnetotransport of 2-D hole gases in Si/SiGe/Si heterostructures journal, April 1994

Pseudospin Quantum Computation in Semiconductor Nanostructures
journal, October 2003

Anisotropy of g-factor and electron spin resonance linewidth in modulation doped SiGe quantum wells
journal, September 2004

Integer quantum Hall states in coupled double electron gas systems at mismatched carrier densities
journal, May 1996

New fractional quantum Hall state in double-layer two-dimensional electron systems
journal, March 1992

Exciton condensation and perfect Coulomb drag
journal, August 2012

Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors
journal, March 2012

High-performance strained Si/SiGe pMOS devices with multiple quantum wells
journal, December 2002

Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
journal, May 2006

A one-dimensional SiGe superlattice grown by UHV epitaxy
journal, November 1975

Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors
journal, October 2011

High-mobility Si and Ge structures
journal, December 1997

Analysis of retrograded double quantum well p-type MOSFET
journal, September 1998

Quantum-Hall quantum bits
journal, October 2002

Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures
journal, July 2012

Design and fabrication of a SiGe double quantum well structure for g-factor tuning
journal, May 2006

Evidence for a Finite-Temperature Phase Transition in a Bilayer Quantum Hall System
journal, March 2008

Evolution of the bilayer $ν = 1$ quantum Hall state under charge imbalance
journal, February 2005

Fractional quantum Hall effect in bilayer two-dimensional hole-gas systems
journal, August 1996

Vanishing Hall Resistance at High Magnetic Field in a Double-Layer Two-Dimensional Electron System
journal, July 2004

Valley splitting of $Si ∕ {Si}_{1 - x} {Ge}_{x}$ heterostructures in tilted magnetic fields
journal, April 2006

Observation of intersubband scattering in a 2-dimensional electron system
journal, March 1982

Role of Density Imbalance in an Interacting Bilayer Hole System
journal, August 2003

Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs
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Magnetic-field-driven destruction of quantum Hall states in a double quantum well
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Photoluminescence and magnetotransport of 2-D hole gases in Si/SiGe/Si heterostructures
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