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Title: Controlling the metal to semiconductor transition of MoS2 and WS2 in solution

Lithiation-exfoliation produces single to few-layered MoS2 and WS2 sheets dispersible in water. However, the process transforms them from the pristine semiconducting 2H phase to a distorted metallic phase. Recovery of the semiconducting properties typically involves heating of the chemically exfoliated sheets at elevated temperatures. Therefore, it has been largely limited to sheets deposited on solid substrates. We report the dispersion of chemically exfoliated MoS2 sheets in high boiling point organic solvents enabled by surface functionalization and the controllable recovery of their semiconducting properties directly in solution. Ultimately, this process connects the scalability of chemical exfoliation with the simplicity of solution processing, enabling a facile method for tuning the metal to semiconductor transitions of MoS2 and WS2 within a liquid medium.
Authors:
 [1] ; ;  [2] ;  [1] ;  [3] ;  [1] ; ;  [3] ;  [4] ; ;  [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Northwestern Univ., Evanston, IL (United States)
  3. Univ. of Virginia, Charlottesville, VA (United States)
  4. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of New Mexico, Albuquerque, NM (United States)
Publication Date:
OSTI Identifier:
1235256
Report Number(s):
SAND--2015-0020J
Journal ID: ISSN 0002-7863; 558288
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Journal of the American Chemical Society
Additional Journal Information:
Journal Volume: 137; Journal ID: ISSN 0002-7863
Publisher:
American Chemical Society (ACS)
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY