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Title: Influence of Mn concentration on magnetic topological insulator MnxBi2−xTe3 thin-film Hall-effect sensor

Hall-effect (HE) sensors based on high-quality Mn-doped Bi2Te3 topological insulator (TI) thin films have been systematically studied in this paper. Improvement of Hall sensitivity is found after doping the magnetic element Mn into Bi2Te3. The sensors with low Mn concentrations, MnxBi2-xTe3, x = 0.01 and 0.08 show the linear behavior of Hall resistance with sensitivity about 5 Ω/T. And their Hall sensitivity shows weak dependence on temperature. For sensors with high Mn concentration (x = 0.23), the Hall resistance with respect to magnetic field shows a hysteretic behavior. Moreover, its sensitivity shows almost eight times as high as that of the HE sensors with low Mn concentration. The highest sensitivity can reach 43 Ω/T at very low magnetic field. This increase of Hall sensitivity is caused by the occurrence of anomalous HE (AHE) after ferromagnetic phase transition. Our work indicates that the magnetic-element-doped TIs with AHE are good candidates for HE sensors.
Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [1]
  1. Iowa State Univ., Ames, IA (United States)
  2. Iowa State Univ., Ames, IA (United States); Ames Lab. (AMES), Ames, IA (United States)
Publication Date:
OSTI Identifier:
1234460
Report Number(s):
IS-J--8870
Journal ID: ISSN 0018-9464
Grant/Contract Number:
AC02-07CH11358
Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Magnetics
Additional Journal Information:
Journal Volume: 51; Journal Issue: 11; Journal ID: ISSN 0018-9464
Publisher:
Institute of Electrical and Electronics Engineers. Magnetics Group
Research Org:
Ames Lab. (AMES), Ames, IA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Hall effect devices; topological insulators; thin films; sensitivity