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This content will become publicly available on October 8, 2016

Title: Facet-selective nucleation and conformal epitaxy of Ge shells on Si nanowires

Knowledge of nanoscale heteroepitaxy is continually evolving as advances in material synthesis reveal new mechanisms that have not been theoretically predicted and are different than what is known about planar structures. In addition to a wide range of potential applications, core/shell nanowire structures offer a useful template to investigate heteroepitaxy at the atomistic scale. We show that the growth of a Ge shell on a Si core can be tuned from the theoretically predicted island growth mode to a conformal, crystalline, and smooth shell by careful adjustment of growth parameters in a narrow growth window that has not been explored before. In the latter growth mode, Ge adatoms preferentially nucleate islands on the {113} facets of the Si core, which outgrow over the {220} facets. Islands on the low-energy {111} facets appear to have a nucleation delay compared to the {113} islands; however, they eventually coalesce to form a crystalline conformal shell. As a result, synthesis of epitaxial and conformal Si/Ge/Si core/multishell structures enables us to fabricate unique cylindrical ring nanowire field-effect transistors, which we demonstrate to have steeper on/off characteristics than conventional core/shell nanowire transistors.
Authors:
 [1] ;  [2] ;  [3] ;  [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Univ. of California San Diego, La Jolla, CA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Univ. of California San Diego, La Jolla, CA (United States)
Publication Date:
OSTI Identifier:
1234259
Report Number(s):
LA-UR--15-24330
Journal ID: ISSN 1530-6984
Grant/Contract Number:
ECCS1351980; AC52-06NA25396
Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 15; Journal Issue: 11; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Research Org:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY Si; Ge; core/shell; nanowire; nucleation; facet; misfit dislocation; FET