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Title: Band edge engineering of oxide photoanodes for photoelectrochemical water splitting: Integration of subsurface dipoles with atomic-scale control

Abstract

One of the crucial parameters dictating the efficiency of photoelectrochemical water-splitting is the semiconductor band edge alignment with respect to hydrogen and oxygen redox potentials. Despite the importance of metal oxides in their use as photoelectrodes, studies to control the band edge alignment in aqueous solution have been limited predominantly to compound semiconductors with modulation ranges limited to a few hundred mV. The ability to modulate the flat band potential of oxide photoanodes by as much as 1.3 V, using the insertion of subsurface electrostatic dipoles near a Nb-doped SrTiO3/aqueous electrolyte interface is reported. Lastly, the tunable range achieved far exceeds previous reports in any semiconductor/aqueous electrolyte system and suggests a general design strategy for highly efficient oxide photoelectrodes.

Authors:
 [1];  [2];  [3];  [3];  [1];  [2];  [2]
+ Show Author Affiliations
  1. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)
  3. Stanford Univ., Stanford, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Org.:
National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1234195
Report Number(s):
SLAC-PUB-16452
Journal ID: ISSN 1614-6840
Grant/Contract Number:  
AC02-76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Energy Materials (Online)
Additional Journal Information:
Journal Name: Advanced Energy Materials (Online); Journal Volume: 6; Journal Issue: 7; Journal ID: ISSN 1614-6840
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEM; ENG; MATSCI; interface dipoles; oxide/electrolyte interfaces; photoelectrochemical cells; solar water splitting; SrTiO3

Citation Formats

Hikita, Yasuyuki, Nishio, Kazunori, Seitz, Linsey C., Chakthranont, Pongkarn, Tachikawa, Takashi, Jaramillo, Thomas F., and Hwang, Harold Y. Band edge engineering of oxide photoanodes for photoelectrochemical water splitting: Integration of subsurface dipoles with atomic-scale control. United States: N. p., 2016. Web. doi:10.1002/aenm.201502154.
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Hikita, Yasuyuki, Nishio, Kazunori, Seitz, Linsey C., Chakthranont, Pongkarn, Tachikawa, Takashi, Jaramillo, Thomas F., & Hwang, Harold Y. Band edge engineering of oxide photoanodes for photoelectrochemical water splitting: Integration of subsurface dipoles with atomic-scale control. United States. https://doi.org/10.1002/aenm.201502154
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Hikita, Yasuyuki, Nishio, Kazunori, Seitz, Linsey C., Chakthranont, Pongkarn, Tachikawa, Takashi, Jaramillo, Thomas F., and Hwang, Harold Y. Fri . "Band edge engineering of oxide photoanodes for photoelectrochemical water splitting: Integration of subsurface dipoles with atomic-scale control". United States. https://doi.org/10.1002/aenm.201502154. https://www.osti.gov/servlets/purl/1234195.
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@article{osti_1234195,
title = {Band edge engineering of oxide photoanodes for photoelectrochemical water splitting: Integration of subsurface dipoles with atomic-scale control},
author = {Hikita, Yasuyuki and Nishio, Kazunori and Seitz, Linsey C. and Chakthranont, Pongkarn and Tachikawa, Takashi and Jaramillo, Thomas F. and Hwang, Harold Y.},
abstractNote = {One of the crucial parameters dictating the efficiency of photoelectrochemical water-splitting is the semiconductor band edge alignment with respect to hydrogen and oxygen redox potentials. Despite the importance of metal oxides in their use as photoelectrodes, studies to control the band edge alignment in aqueous solution have been limited predominantly to compound semiconductors with modulation ranges limited to a few hundred mV. The ability to modulate the flat band potential of oxide photoanodes by as much as 1.3 V, using the insertion of subsurface electrostatic dipoles near a Nb-doped SrTiO3/aqueous electrolyte interface is reported. Lastly, the tunable range achieved far exceeds previous reports in any semiconductor/aqueous electrolyte system and suggests a general design strategy for highly efficient oxide photoelectrodes.},
doi = {10.1002/aenm.201502154},
journal = {Advanced Energy Materials (Online)},
number = 7,
volume = 6,
place = {United States},
year = {Fri Jan 22 00:00:00 EST 2016},
month = {Fri Jan 22 00:00:00 EST 2016}
}
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https://doi.org/10.1002/aenm.201502154
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