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Title: Electronic structure and insulating gap in epitaxial VO2 polymorphs

Authors:
 [1] ;  [1] ;  [2] ;  [3] ;  [1] ;  [1] ;  [4] ;  [5] ;  [2] ;  [1]
  1. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  2. Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, South Korea, Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea
  3. School of Materials Science and Engineering, Chonnam National University, Gwangju 61186, South Korea
  4. Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506, USA
  5. Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
Publication Date:
OSTI Identifier:
1233950
Grant/Contract Number:
AC02-06CH11357
Type:
Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 12; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English