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Title: Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solar cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [1] ;  [1] ;  [1] ;  [1]
  1. École Polytechnique Fédérale de Lausanne (EPFL), Neuchatel (Switzerland)
  2. Centre Suisse d' Electronique et de Microtechnique, Neuchatel (Switzerland)
Publication Date:
OSTI Identifier:
1229742
Grant/Contract Number:
EE0006335
Type:
Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Name: IEEE Journal of Photovoltaics; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Research Org:
École Polytechnique Fédérale de Lausanne (EPFL), Neuchatel (Switzerland)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY amorphous silicon; crystalline silicon; charge carrier lifetime; heterojunctions; photovoltaic cells; solar cells