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Title: Effect of vacancies on the structure and properties of Ga2(Se0.33Te0.67)3

Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5]
  1. Department of Nuclear Engineering, University of California, Berkeley, California 94720, USA, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA, Materials Department, University of California, Santa Barbara, California 93106, USA
  2. European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex, France, Department of Physics, University of California, Berkeley, California 94720, USA
  3. Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
  4. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  5. Department of Nuclear Engineering, University of California, Berkeley, California 94720, USA, Department of Nuclear Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA
Publication Date:
OSTI Identifier:
1229643
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 8; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English