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Title: Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Authors:
 [1] ;  [2] ;  [3] ;  [4]
  1. Department of Micro- and Nanoelectronic Systems, Institute of Micro and Nanoelectronics, Faculty of Electrical Engineering and Information Technology, Ilmenau University of Technology, Gustav-Kirchhoff-Straße 1, Ilmenau 98693, Germany, Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
  2. Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
  3. Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA, Oxford Instruments, 300 Baker Avenue, Suite 150, Concord, Massachusetts 01742, USA
  4. Department of Micro- and Nanoelectronic Systems, Institute of Micro and Nanoelectronics, Faculty of Electrical Engineering and Information Technology, Ilmenau University of Technology, Gustav-Kirchhoff-Straße 1, Ilmenau 98693, Germany
Publication Date:
OSTI Identifier:
1229572
Grant/Contract Number:
AC02- 05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 5; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English