Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy
Abstract
Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured GaxIn1-xP (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.
- Authors:
-
- Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States)
- Royal Institute of Technology (KTH), Kista (Sweden)
- Publication Date:
- Research Org.:
- Energy Frontier Research Centers (EFRC) (United States). Light-Material Interactions in Energy Conversion (LMI)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1371061
- Alternate Identifier(s):
- OSTI ID: 1228721
- Grant/Contract Number:
- SC0001293
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 118; Journal Issue: 22; Related Information: LMI partners with California Institute of Technology (lead); Harvard University; University of Illinois, Urbana-Champaign; Lawrence Berkeley National Laboratory; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; solar (photovoltaic), solid state lighting, phonons, thermal conductivity, electrodes - solar, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly)
Citation Formats
Zheng, Qiye, Kim, Honggyu, Zhang, Runyu, Sardela, Mauro, Zuo, Jianmin, Balaji, Manavaimaran, Lourdudoss, Sebastian, Sun, Yan -Ting, and Braun, Paul V. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy. United States: N. p., 2015.
Web. doi:10.1063/1.4937273.
Zheng, Qiye, Kim, Honggyu, Zhang, Runyu, Sardela, Mauro, Zuo, Jianmin, Balaji, Manavaimaran, Lourdudoss, Sebastian, Sun, Yan -Ting, & Braun, Paul V. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy. United States. https://doi.org/10.1063/1.4937273
Zheng, Qiye, Kim, Honggyu, Zhang, Runyu, Sardela, Mauro, Zuo, Jianmin, Balaji, Manavaimaran, Lourdudoss, Sebastian, Sun, Yan -Ting, and Braun, Paul V. Mon .
"Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy". United States. https://doi.org/10.1063/1.4937273. https://www.osti.gov/servlets/purl/1371061.
@article{osti_1371061,
title = {Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy},
author = {Zheng, Qiye and Kim, Honggyu and Zhang, Runyu and Sardela, Mauro and Zuo, Jianmin and Balaji, Manavaimaran and Lourdudoss, Sebastian and Sun, Yan -Ting and Braun, Paul V.},
abstractNote = {Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured GaxIn1-xP (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.},
doi = {10.1063/1.4937273},
journal = {Journal of Applied Physics},
number = 22,
volume = 118,
place = {United States},
year = {Mon Dec 14 00:00:00 EST 2015},
month = {Mon Dec 14 00:00:00 EST 2015}
}
Web of Science
Figures / Tables:
Works referenced in this record:
Single-Crystal Colloidal Multilayers of Controlled Thickness
journal, July 1999
- Jiang, P.; Bertone, J. F.; Hwang, K. S.
- Chemistry of Materials, Vol. 11, Issue 8
Hydride vapor phase epitaxy revisited
journal, June 1997
- Lourdudoss, S.; Kjebon, O.
- IEEE Journal of Selected Topics in Quantum Electronics, Vol. 3, Issue 3, p. 749-767
On-chip natural assembly of silicon photonic bandgap crystals
journal, November 2001
- Vlasov, Yurii A.; Bo, Xiang-Zheng; Sturm, James C.
- Nature, Vol. 414, Issue 6861, p. 289-293
Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films
journal, September 1997
- Angerer, H.; Brunner, D.; Freudenberg, F.
- Applied Physics Letters, Vol. 71, Issue 11
Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation
journal, August 2007
- Quitoriano, Nathaniel J.; Fitzgerald, Eugene A.
- Journal of Applied Physics, Vol. 102, Issue 3
Controlled growth of monodisperse silica spheres in the micron size range
journal, January 1968
- Stöber, Werner; Fink, Arthur; Bohn, Ernst
- Journal of Colloid and Interface Science, Vol. 26, Issue 1, p. 62-69
Structural investigation of GaInP nanowires using X-ray diffraction
journal, September 2013
- Kriegner, D.; Persson, J. M.; Etzelstorfer, T.
- Thin Solid Films, Vol. 543
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
journal, June 2007
- Krames, Michael R.; Shchekin, Oleg B.; Mueller-Mach, Regina
- Journal of Display Technology, Vol. 3, Issue 2, p. 160-175
Optical microcavities
journal, August 2003
- Vahala, Kerry J.
- Nature, Vol. 424, Issue 6950, p. 839-846
Investigation of the “composition-pulling or lattice-latching” effect in LPE
journal, April 2005
- del P. Rodríguez-Torres, M.; Gorbatchev, A. Yu.; Mishurnyi, V. A.
- Journal of Crystal Growth, Vol. 277, Issue 1-4
Gallium Nitride Based Logpile Photonic Crystals
journal, November 2011
- Subramania, Ganapathi; Li, Qiming; Lee, Yun-Ju
- Nano Letters, Vol. 11, Issue 11
Highly Directional Emission from Photonic Crystal Waveguides of Subwavelength Width
journal, March 2004
- Kramper, P.; Agio, M.; Soukoulis, C. M.
- Physical Review Letters, Vol. 92, Issue 11
Die Konstitution der Mischkristalle und die Raumf�llung der Atome
journal, January 1921
- Vegard, L.
- Zeitschrift f�r Physik, Vol. 5, Issue 1
Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers
journal, May 2009
- Tsai, Yu-Li; Horng, Ray-Hua; Tseng, Ming-Chun
- Journal of Crystal Growth, Vol. 311, Issue 11
Simultaneous determination of Poisson ratio, bulk lattice constant, and composition of ternary compounds: In0.3Ga0.7As, In0.3Al0.7As, In0.7Ga0.3P, and In0.7Al0.3P
journal, December 2001
- Hoke, W. E.; Kennedy, T. D.; Torabi, A.
- Applied Physics Letters, Vol. 79, Issue 25
High-efficiency solar cells from III-V compound semiconductors
journal, March 2006
- Dimroth, F.
- physica status solidi (c), Vol. 3, Issue 3
Zinc blende GaAsSb nanowires grown by molecular beam epitaxy
journal, May 2008
- Dheeraj, D. L.; Patriarche, G.; Largeau, L.
- Nanotechnology, Vol. 19, Issue 27
Avoiding cracks in self-assembled photonic band-gap crystals
journal, May 2004
- Chabanov, A. A.; Jun, Y.; Norris, D. J.
- Applied Physics Letters, Vol. 84, Issue 18
Selective epitaxial growth of GaInP by low‐pressure metal‐organic chemical‐vapor deposition using ethyldimethylindium as In source
journal, October 1994
- Chan, Shih‐Hsiung; Sze, Simon Ming; Chang, Chun‐Yen
- Applied Physics Letters, Vol. 65, Issue 17
Low-loss III-V semiconductor optical waveguides
journal, March 1991
- Deri, R. J.; Kapon, E.
- IEEE Journal of Quantum Electronics, Vol. 27, Issue 3
A selective survey of computational electromagnetics
journal, January 1988
- Miller, E. K.
- IEEE Transactions on Antennas and Propagation, Vol. 36, Issue 9
Microporous materials: Electrochemically grown photonic crystals
journal, December 1999
- Braun, Paul V.; Wiltzius, Pierre
- Nature, Vol. 402, Issue 6762, p. 603-604
Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
journal, October 2003
- Oh, Ho-jin; Sugiyama, Masakazu; Nakano, Yoshiaki
- Japanese Journal of Applied Physics, Vol. 42, Issue Part 1, No. 10
High resolution x-ray diffraction study of Bragg peak width in strained InGaAs/InAlAs/InP heterostructures
journal, June 1998
- Yang, Quankui; Li, Aizhen; Chen, Jianxin
- Journal of Applied Physics, Vol. 83, Issue 11
Spontaneous surface-induced long-range order in P alloys
journal, November 1991
- Bernard, James E.; Froyen, S.; Zunger, Alex
- Physical Review B, Vol. 44, Issue 20
Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns
journal, November 2005
- Kim, Dong-Ho; Cho, Chi-O; Roh, Yeong-Geun
- Applied Physics Letters, Vol. 87, Issue 20
Full Three-Dimensional Photonic Bandgap Crystals at Near-Infrared Wavelengths
journal, July 2000
- Noda, S.
- Science, Vol. 289, Issue 5479
Configurations of misfit dislocations at interfaces of lattice-matched Ga0.5In0.5P/GaAs heterostructures
journal, July 2000
- Wang, Y. Q.; Wang, Z. L.; Brown, T.
- Applied Physics Letters, Vol. 77, Issue 2
Degradation of III–V Opto-Electronic Devices
journal, January 1988
- Ueda, O.
- Journal of The Electrochemical Society, Vol. 135, Issue 1
A brief history of defect formation, segregation, faceting, and twinning in melt-grown semiconductors
journal, March 2004
- Hurle, D. T. J.; Rudolph, P.
- Journal of Crystal Growth, Vol. 264, Issue 4
High filling fraction gallium phosphide inverse opals by atomic layer deposition
journal, November 2006
- Graugnard, E.; Chawla, V.; Lorang, D.
- Applied Physics Letters, Vol. 89, Issue 21
Control of misfit dislocation glide plane distribution during strain relaxation of CuPt-ordered GaInAs and GaInP
journal, July 2012
- France, R. M.; McMahon, W. E.; Norman, A. G.
- Journal of Applied Physics, Vol. 112, Issue 2
Refractive indices measurement of (GaInP) m /(AlInP) n quasi‐quaternaries and GaInP/AlInP multiple quantum wells
journal, August 1994
- Kaneko, Yawara; Kishino, Katsumi
- Journal of Applied Physics, Vol. 76, Issue 3
X-ray diffraction from low-dimensional structures
journal, November 1993
- Fewster, P. F.
- Semiconductor Science and Technology, Vol. 8, Issue 11
Epitaxial Growth of Three-Dimensionally Mesostructured Single-Crystalline Cu 2 O via Templated Electrodeposition
journal, December 2014
- Kim, Jinwoo; Kim, Ha Seong; Choi, Jun Hee
- Chemistry of Materials, Vol. 26, Issue 24
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
journal, August 1994
- Morkoç, H.; Strite, S.; Gao, G. B.
- Journal of Applied Physics, Vol. 76, Issue 3
Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction
journal, July 2001
- Yuan, K.; Radhakrishnan, K.; Zheng, H. Q.
- Thin Solid Films, Vol. 391, Issue 1
Linear waveguides in photonic-crystal slabs
journal, September 2000
- Johnson, Steven G.; Villeneuve, Pierre R.; Fan, Shanhui
- Physical Review B, Vol. 62, Issue 12
Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films
journal, January 1996
- Heying, B.; Wu, X. H.; Keller, S.
- Applied Physics Letters, Vol. 68, Issue 5
Erratum: “Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping” [Appl. Phys. Lett. 80 , 3913 (2002)]
journal, October 2002
- Pereira, S.; Correia, M. R.; Pereira, E.
- Applied Physics Letters, Vol. 81, Issue 18
Selective growth of GaAs in the MOMBE and MOCVD systems
journal, September 1986
- Heinecke, H.; Brauers, A.; Grafahrend, F.
- Journal of Crystal Growth, Vol. 77, Issue 1-3
Application of the model of the relaxation line in reciprocal space to II-VI heterostructures
journal, April 1995
- Heinke, H.; Einfeldt, S.; Kuhn-Heinrich, B.
- Journal of Physics D: Applied Physics, Vol. 28, Issue 4A
High quality InP nanopyramidal frusta on Si
journal, January 2014
- Metaferia, Wondwosen; Dev, Apurba; Kataria, Himanshu
- CrystEngComm, Vol. 16, Issue 21
Exploiting long-range atomic ordering for the investigation of strain relaxation in lattice-mismatched epitaxy
journal, March 2002
- Spiecker, E.; Seibt, M.; Schröter, W.
- Applied Surface Science, Vol. 188, Issue 1-2
Three-Dimensional Photonic Bandgap Crystals by Wafer Bonding Approach
book, January 2004
- Noda, S.
- Wafer Bonding
Ion channeling and x-ray diffraction study of tensely strained GaInP layers on InP
journal, January 1999
- Cohen, G. M.; Ritter, D.; Richter, V.
- Applied Physics Letters, Vol. 74, Issue 1
Inhibited Spontaneous Emission in Solid-State Physics and Electronics
journal, May 1987
- Yablonovitch, Eli
- Physical Review Letters, Vol. 58, Issue 20, p. 2059-2062
Microassembly of semiconductor three-dimensional photonic crystals
journal, January 2003
- Aoki, Kanna; Miyazaki, Hideki T.; Hirayama, Hideki
- Nature Materials, Vol. 2, Issue 2, p. 117-121
Fundamental limit of nanophotonic light trapping in solar cells
journal, September 2010
- Yu, Zongfu; Raman, Aaswath; Fan, Shanhui
- Proceedings of the National Academy of Sciences, Vol. 107, Issue 41, p. 17491-17496
Surface-induced ordering in GaInP
journal, April 1991
- Froyen, Sverre; Zunger, Alex
- Physical Review Letters, Vol. 66, Issue 16
Epitaxial growth of three-dimensionally architectured optoelectronic devices
journal, July 2011
- Nelson, Erik C.; Dias, Neville L.; Bassett, Kevin P.
- Nature Materials, Vol. 10, Issue 9
Works referencing / citing this record:
Electrodeposited high strength, thermally stable spectrally selective rhenium nickel inverse opals
journal, January 2017
- Zhang, Runyu; Cohen, Joseph; Fan, Shanhui
- Nanoscale, Vol. 9, Issue 31
Figures / Tables found in this record: