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Title: O-O bonding stabilized zinc vacancy as origin of p-type doping on Σ7 ZnO grain boundary

Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [3]
  1. SHU-Solar Energy R&D Laboratory, Department of Physics, Shanghai University, Shanghai 200444, China
  2. Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China
  3. National Renewable Energy Laboratory, Golden, Colorado 80401, USA
Publication Date:
OSTI Identifier:
1228700
Grant/Contract Number:
AC36-08GO28308
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 4; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English