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Title: In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors

Authors:
 [1] ;  [2] ;  [2] ;  [3] ;  [3] ;  [4] ;  [2]
  1. Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA, Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
  2. Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA
  3. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  4. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
Publication Date:
OSTI Identifier:
1228673
Grant/Contract Number:
AC02-05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 3; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English