In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors
- Authors:
-
- Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA, Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
- Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1228673
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Name: Journal of Applied Physics Journal Volume: 118 Journal Issue: 3; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Kilcoyne, A. L. David, Tyliszczak, Tolek, Nishi, Yoshio, and Williams, R. Stanley. In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors. United States: N. p., 2015.
Web. doi:10.1063/1.4926477.
Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Kilcoyne, A. L. David, Tyliszczak, Tolek, Nishi, Yoshio, & Williams, R. Stanley. In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors. United States. https://doi.org/10.1063/1.4926477
Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Kilcoyne, A. L. David, Tyliszczak, Tolek, Nishi, Yoshio, and Williams, R. Stanley. Wed .
"In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors". United States. https://doi.org/10.1063/1.4926477.
@article{osti_1228673,
title = {In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors},
author = {Kumar, Suhas and Graves, Catherine E. and Strachan, John Paul and Kilcoyne, A. L. David and Tyliszczak, Tolek and Nishi, Yoshio and Williams, R. Stanley},
abstractNote = {},
doi = {10.1063/1.4926477},
journal = {Journal of Applied Physics},
number = 3,
volume = 118,
place = {United States},
year = {Wed Jul 15 00:00:00 EDT 2015},
month = {Wed Jul 15 00:00:00 EDT 2015}
}
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https://doi.org/10.1063/1.4926477
https://doi.org/10.1063/1.4926477
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Cited by: 22 works
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Works referenced in this record:
Two centuries of memristors
journal, May 2012
- Prodromakis, Themistoklis; Toumazou, Christofer; Chua, Leon
- Nature Materials, Vol. 11, Issue 6
Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior
journal, March 2012
- Goldfarb, I.; Miao, F.; Yang, J. Joshua
- Applied Physics A, Vol. 107, Issue 1
High switching endurance in TaOx memristive devices
journal, December 2010
- Yang, J. Joshua; Zhang, M. -X.; Strachan, John Paul
- Applied Physics Letters, Vol. 97, Issue 23
Nonuniform switching of the perpendicular magnetization in a spin-torque-driven magnetic nanopillar
journal, May 2011
- Bernstein, David P.; Bräuer, Björn; Kukreja, Roopali
- Physical Review B, Vol. 83, Issue 18
A scalable neuristor built with Mott memristors
journal, December 2012
- Pickett, Matthew D.; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley
- Nature Materials, Vol. 12, Issue 2
Lattice instabilities in metallic elements
journal, June 2012
- Grimvall, Göran; Magyari-Köpe, Blanka; Ozoliņš, Vidvuds
- Reviews of Modern Physics, Vol. 84, Issue 2
Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
journal, November 2011
- Miao, Feng; Strachan, John Paul; Yang, J. Joshua
- Advanced Materials, Vol. 23, Issue 47, p. 5633-5640
Spectromicroscopy of tantalum oxide memristors
journal, June 2011
- Strachan, John Paul; Medeiros-Ribeiro, Gilberto; Yang, J. Joshua
- Applied Physics Letters, Vol. 98, Issue 24, Article No. 242114
Sub-nanosecond switching of a tantalum oxide memristor
journal, November 2011
- Torrezan, Antonio C.; Strachan, John Paul; Medeiros-Ribeiro, Gilberto
- Nanotechnology, Vol. 22, Issue 48
Real space soft x-ray imaging at 10 nm spatial resolution
journal, January 2012
- Chao, W.; Fischer, P.; Tyliszczak, T.
- Optics Express, Vol. 20, Issue 9
The formation of metal–oxygen species at low temperatures
journal, May 1990
- Qiu, S. L.; Lin, C. L.; Chen, Jie
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 8, Issue 3
Phase transition behavior in microcantilevers coated with M 1 -phase VO 2 and M 2 -phase VO 2 :Cr thin films
journal, May 2012
- Rúa, Armando; Cabrera, Rafmag; Coy, Horacio
- Journal of Applied Physics, Vol. 111, Issue 10
Interpreting the near edges of and in alkali-metal superoxides
journal, October 1991
- Ruckman, M. W.; Chen, Jie; Qiu, S. L.
- Physical Review Letters, Vol. 67, Issue 18
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
journal, April 2010
- Borghetti, Julien; Snider, Gregory S.; Kuekes, Philip J.
- Nature, Vol. 464, Issue 7290
Investigations of Conduction Mechanisms of the Self-Rectifying n+Si-HfO2–Ni RRAM Devices
journal, July 2014
- Lu, Dongyi; Zhao, Yadong; Anh, Tran Xuan
- IEEE Transactions on Electron Devices, Vol. 61, Issue 7, p. 2294-2301
Direct Identification of the Conducting Channels in a Functioning Memristive Device
journal, June 2010
- Strachan, John Paul; Pickett, Matthew D.; Yang, J. Joshua
- Advanced Materials, Vol. 22, Issue 32, p. 3573-3577
Memristor-The missing circuit element
journal, January 1971
- Chua, L.
- IEEE Transactions on Circuit Theory, Vol. 18, Issue 5
External-Strain Induced Insulating Phase Transition in VO2 Nanobeam and Its Application as Flexible Strain Sensor
journal, September 2010
- Hu, Bin; Ding, Yong; Chen, Wen
- Advanced Materials, Vol. 22, Issue 45
Metal–Oxide RRAM
journal, June 2012
- Wong, H.-S. Philip; Lee, Heng-Yuan; Yu, Shimeng
- Proceedings of the IEEE, Vol. 100, Issue 6, p. 1951-1970
Measuring the switching dynamics and energy efficiency of tantalum oxide memristors
journal, November 2011
- Strachan, John Paul; Torrezan, Antonio C.; Medeiros-Ribeiro, Gilberto
- Nanotechnology, Vol. 22, Issue 50
The O 1s x-ray absorption spectra of transition-metal oxides: The TiO2−ZrO2−HfO2 and V2O5−Nb2O5−Ta2O5 series
journal, August 1993
- Soriano, L.; Abbate, M.; Fuggle, J. C.
- Solid State Communications, Vol. 87, Issue 8
First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides
journal, June 2012
- Magyari-Köpe, Blanka; Park, Seong Geon; Lee, Hyung-Dong
- Journal of Materials Science, Vol. 47, Issue 21
The identification of peroxy-features at polymer surfaces by ESCA
journal, June 1981
- Dilks, A.
- Journal of Polymer Science: Polymer Chemistry Edition, Vol. 19, Issue 6
Near‐edge x‐ray absorption fine structure characterization of compositions and reactivities of transition metal oxides
journal, May 1996
- Chen, J. G.; Frühberger, B.; Colaianni, M. L.
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 14, Issue 3
Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories
journal, April 2013
- Kamiya, Katsumasa; Yang, Moon Young; Nagata, Takahiro
- Physical Review B, Vol. 87, Issue 15
Photoemission studies of the low-temperature reaction of metals and oxygen
journal, April 1990
- Qiu, S. L.; Lin, C. L.; Chen, J.
- Physical Review B, Vol. 41, Issue 11
Ultra-thin perfect absorber employing a tunable phase change material
journal, November 2012
- Kats, Mikhail A.; Sharma, Deepika; Lin, Jiao
- Applied Physics Letters, Vol. 101, Issue 22
Chemical changes induced by sputtering in TiO2 and some selected titanates as observed by X-ray absorption spectroscopy
journal, June 1993
- Soriano, L.; Abbate, M.; Vogel, J.
- Surface Science, Vol. 290, Issue 3
Memristive devices for computing
journal, January 2013
- Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R.
- Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24
Engineering nonlinearity into memristors for passive crossbar applications
journal, March 2012
- Joshua Yang, J.; Zhang, M.-X.; Pickett, Matthew D.
- Applied Physics Letters, Vol. 100, Issue 11, Article No. 113501