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Title: H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells

Authors:
 [1] ;  [2] ;  [2] ;  [2] ;  [1] ;  [1]
  1. Imec, Kapeldreef 75, B-3001 Leuven, Belgium
  2. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
Publication Date:
OSTI Identifier:
1228568
Grant/Contract Number:
AC02-06CH11357
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 12; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English