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Title: Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures

Authors:
 [1] ;  [1] ;  [2] ;  [2] ;  [1]
  1. Collaboratory for Advanced Computing and Simulations, Department of Physics & Astronomy, Department of Computer Science, Department of Chemical Engineering & Materials Science, University of Southern California, Los Angeles, California 90089-0242, USA
  2. Collaboratory for Advanced Computing and Simulations, Department of Physics & Astronomy, Department of Computer Science, Department of Chemical Engineering & Materials Science, University of Southern California, Los Angeles, California 90089-0242, USA, Department of Physics, Kumamoto University, Kumamoto 860-8555, Japan
Publication Date:
OSTI Identifier:
1228519
Grant/Contract Number:
SC0001013
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 5; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English