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Title: Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition

Authors:
 [1] ;  [1] ;  [2] ;  [2] ;  [3] ;  [3] ;  [3] ;  [1]
  1. Center for High Technology Materials and Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106, USA
  2. Department of Earth and Planetary Sciences, University of New Mexico, Albuquerque, New Mexico 87131, USA
  3. Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
Publication Date:
OSTI Identifier:
1228438
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 23; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English