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Title: Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

Authors:
 [1] ;  [1] ;  [2] ;  [2] ;  [1] ;  [1]
  1. School of Electrical Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-8806, USA
  2. Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Publication Date:
OSTI Identifier:
1228331
Grant/Contract Number:
AC52-06NA25396
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 2; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English