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Title: Phase measurements of EUV mask defects

Extreme Ultraviolet (EUV) Lithography mask defects were examined on the actinic mask imaging system, SHARP, at Lawrence Berkeley National Laboratory. Also, a quantitative phase retrieval algorithm based on the Weak Object Transfer Function was applied to the measured through-focus aerial images to examine the amplitude and phase of the defects. The accuracy of the algorithm was demonstrated by comparing the results of measurements using a phase contrast zone plate and a standard zone plate. Using partially coherent illumination to measure frequencies that would otherwise fall outside the numerical aperture (NA), it was shown that some defects are smaller than the conventional resolution of the microscope. We found that the programmed defects of various sizes were measured and shown to have both an amplitude and a phase component that the algorithm is able to recover.
Authors:
 [1] ;  [1] ;  [2] ;  [2] ;  [2] ;  [1] ;  [2] ;  [1]
  1. Univ. of California, Berkeley, CA (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
OSTI Identifier:
1227885
Report Number(s):
LBNL--176093
Journal ID: ISSN 0091-3286; ir:176093
Type:
Accepted Manuscript
Journal Name:
Optical Engineering
Additional Journal Information:
Journal Volume: 9422; Journal ID: ISSN 0091-3286
Publisher:
SPIE
Research Org:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING extreme ultraviolet; phase measurement; zone plates; apertures; phase retrieval; imaging systems; lithography; microscopes; phase contrast