Origin of spin gapless semiconductor behavior in CoFeCrGa: Theory and Experiment
Abstract
Despite a plethora of materials suggested for spintronic applications, a new class of materials has emerged, namely spin gapless semiconductors (SGS), which offers potentially more advantageous properties than existing ones. These magnetic semiconductors exhibit a finite band gap for one spin channel and a closed gap for the other. Supported by electronic-structure calculations, we report evidence of SGS behavior in equiatomic quaternary CoFeCrGa, having a cubic Heusler (prototype LiMgPdSn) structure but exhibiting chemical disorder (DO3 structure). CoFeCrGa is found to transform from SGS to half-metallic phase under pressure, which is attributed to unique electronic-structure features. The saturation magnetization (MS) was obtained at 8K agrees with the Slater-Pauling rule and the Curie temperature (TC) is found to exceed 400K. Carrier concentration (up to 250K) and electrical conductivity are observed to be nearly temperature independent, prerequisites for SGS. The anomalous Hall coefficient is estimated to be 185S/cm at 5K. Considering the SGS properties and high TC, this material appears to be promising for spintronic applications.
- Authors:
-
- Indian Inst. of Technology (IIT), Mumbai (India)
- Defence Metallurgical Research Lab., Hyderabad (India)
- Universidade Estadual de Campinas-UNICAMP, Sao Paulo (Brazil)
- DCMPMS, Mumbai (India)
- Ames Lab. and Iowa State Univ., Ames, IA (United States)
- Publication Date:
- Research Org.:
- Ames Lab., Ames, IA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1227394
- Alternate Identifier(s):
- OSTI ID: 1198625
- Report Number(s):
- IS-J 8743
Journal ID: ISSN 1098-0121; PRBMDO
- Grant/Contract Number:
- AC02-07CH11358
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review. B, Condensed Matter and Materials Physics
- Additional Journal Information:
- Journal Volume: 92; Journal Issue: 4; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Bainsla, Lakhan, Mallick, A. I., Raja, M. Manivel, Coelho, A. A., Nigam, A. K., Johnson, D. D., Alam, Aftab, and Suresh, K. G.. Origin of spin gapless semiconductor behavior in CoFeCrGa: Theory and Experiment. United States: N. p., 2015.
Web. doi:10.1103/PhysRevB.92.045201.
Bainsla, Lakhan, Mallick, A. I., Raja, M. Manivel, Coelho, A. A., Nigam, A. K., Johnson, D. D., Alam, Aftab, & Suresh, K. G.. Origin of spin gapless semiconductor behavior in CoFeCrGa: Theory and Experiment. United States. https://doi.org/10.1103/PhysRevB.92.045201
Bainsla, Lakhan, Mallick, A. I., Raja, M. Manivel, Coelho, A. A., Nigam, A. K., Johnson, D. D., Alam, Aftab, and Suresh, K. G.. Wed .
"Origin of spin gapless semiconductor behavior in CoFeCrGa: Theory and Experiment". United States. https://doi.org/10.1103/PhysRevB.92.045201. https://www.osti.gov/servlets/purl/1227394.
@article{osti_1227394,
title = {Origin of spin gapless semiconductor behavior in CoFeCrGa: Theory and Experiment},
author = {Bainsla, Lakhan and Mallick, A. I. and Raja, M. Manivel and Coelho, A. A. and Nigam, A. K. and Johnson, D. D. and Alam, Aftab and Suresh, K. G.},
abstractNote = {Despite a plethora of materials suggested for spintronic applications, a new class of materials has emerged, namely spin gapless semiconductors (SGS), which offers potentially more advantageous properties than existing ones. These magnetic semiconductors exhibit a finite band gap for one spin channel and a closed gap for the other. Supported by electronic-structure calculations, we report evidence of SGS behavior in equiatomic quaternary CoFeCrGa, having a cubic Heusler (prototype LiMgPdSn) structure but exhibiting chemical disorder (DO3 structure). CoFeCrGa is found to transform from SGS to half-metallic phase under pressure, which is attributed to unique electronic-structure features. The saturation magnetization (MS) was obtained at 8K agrees with the Slater-Pauling rule and the Curie temperature (TC) is found to exceed 400K. Carrier concentration (up to 250K) and electrical conductivity are observed to be nearly temperature independent, prerequisites for SGS. The anomalous Hall coefficient is estimated to be 185S/cm at 5K. Considering the SGS properties and high TC, this material appears to be promising for spintronic applications.},
doi = {10.1103/PhysRevB.92.045201},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 4,
volume = 92,
place = {United States},
year = {Wed Jul 08 00:00:00 EDT 2015},
month = {Wed Jul 08 00:00:00 EDT 2015}
}
Web of Science
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