Time constant of defect relaxation in ion-irradiated 3C-SiC
Abstract
Above room temperature, the buildup of radiation damage in SiC is a dynamic process governed by the mobility and interaction of ballistically generated point defects. Here in this work, we study the dynamics of radiation defects in 3C-SiC bombarded at 100 °C with 500 keV Ar ions, with the total ion dose split into a train of equal pulses. Damage–depth profiles are measured by ion channeling for a series of samples irradiated under identical conditions except for different durations of the passive part of the beam cycle. Results reveal an effective defect relaxation time constant of ~3 ms (for second order kinetics) and a dynamic annealing efficiency of ~40% for defects in both Si and C sublattices. Finally, this demonstrates a crucial role of dynamic annealing at elevated temperatures and provides evidence of the strong coupling of defect accumulation processes in the two sublattices of 3C-SiC.
- Authors:
-
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States). Department of Nuclear Engineering
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Texas A & M Univ., College Station, TX (United States). Department of Nuclear Engineering
- Publication Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE Office of Nuclear Energy (NE)
- OSTI Identifier:
- 1408991
- Alternate Identifier(s):
- OSTI ID: 1226744
- Report Number(s):
- LLNL-JRNL-668477
Journal ID: ISSN 0003-6951
- Grant/Contract Number:
- AC52-07NA27344
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 106; Journal Issue: 20; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Wallace, J. B., Bayu Aji, L. B., Shao, L., and Kucheyev, S. O. Time constant of defect relaxation in ion-irradiated 3C-SiC. United States: N. p., 2015.
Web. doi:10.1063/1.4921471.
Wallace, J. B., Bayu Aji, L. B., Shao, L., & Kucheyev, S. O. Time constant of defect relaxation in ion-irradiated 3C-SiC. United States. https://doi.org/10.1063/1.4921471
Wallace, J. B., Bayu Aji, L. B., Shao, L., and Kucheyev, S. O. Tue .
"Time constant of defect relaxation in ion-irradiated 3C-SiC". United States. https://doi.org/10.1063/1.4921471. https://www.osti.gov/servlets/purl/1408991.
@article{osti_1408991,
title = {Time constant of defect relaxation in ion-irradiated 3C-SiC},
author = {Wallace, J. B. and Bayu Aji, L. B. and Shao, L. and Kucheyev, S. O.},
abstractNote = {Above room temperature, the buildup of radiation damage in SiC is a dynamic process governed by the mobility and interaction of ballistically generated point defects. Here in this work, we study the dynamics of radiation defects in 3C-SiC bombarded at 100 °C with 500 keV Ar ions, with the total ion dose split into a train of equal pulses. Damage–depth profiles are measured by ion channeling for a series of samples irradiated under identical conditions except for different durations of the passive part of the beam cycle. Results reveal an effective defect relaxation time constant of ~3 ms (for second order kinetics) and a dynamic annealing efficiency of ~40% for defects in both Si and C sublattices. Finally, this demonstrates a crucial role of dynamic annealing at elevated temperatures and provides evidence of the strong coupling of defect accumulation processes in the two sublattices of 3C-SiC.},
doi = {10.1063/1.4921471},
journal = {Applied Physics Letters},
number = 20,
volume = 106,
place = {United States},
year = {Tue May 19 00:00:00 EDT 2015},
month = {Tue May 19 00:00:00 EDT 2015}
}
Web of Science
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Works referencing / citing this record:
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