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Title: Time constant of defect relaxation in ion-irradiated 3C-SiC

Authors:
 [1] ;  [2] ;  [3] ;  [2]
  1. Lawrence Livermore National Laboratory, Livermore, California 94550, USA, Department of Nuclear Engineering, Texas A&M University, College Station, Texas 77843, USA
  2. Lawrence Livermore National Laboratory, Livermore, California 94550, USA
  3. Department of Nuclear Engineering, Texas A&M University, College Station, Texas 77843, USA
Publication Date:
OSTI Identifier:
1226744
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 20; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English