Evolution of GaAs nanowire geometry in selective area epitaxy
- Authors:
-
- Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, International Institute for Carbon-Neutral Energy Research (I2CNER), University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1226729
- Grant/Contract Number:
- DMR #1006581
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Name: Applied Physics Letters Journal Volume: 106 Journal Issue: 13; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Bassett, Kevin P., Mohseni, Parsian K., and Li, Xiuling. Evolution of GaAs nanowire geometry in selective area epitaxy. United States: N. p., 2015.
Web. doi:10.1063/1.4916347.
Bassett, Kevin P., Mohseni, Parsian K., & Li, Xiuling. Evolution of GaAs nanowire geometry in selective area epitaxy. United States. https://doi.org/10.1063/1.4916347
Bassett, Kevin P., Mohseni, Parsian K., and Li, Xiuling. Tue .
"Evolution of GaAs nanowire geometry in selective area epitaxy". United States. https://doi.org/10.1063/1.4916347.
@article{osti_1226729,
title = {Evolution of GaAs nanowire geometry in selective area epitaxy},
author = {Bassett, Kevin P. and Mohseni, Parsian K. and Li, Xiuling},
abstractNote = {},
doi = {10.1063/1.4916347},
journal = {Applied Physics Letters},
number = 13,
volume = 106,
place = {United States},
year = {Tue Mar 31 00:00:00 EDT 2015},
month = {Tue Mar 31 00:00:00 EDT 2015}
}
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https://doi.org/10.1063/1.4916347
https://doi.org/10.1063/1.4916347
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Cited by: 25 works
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