Holmium hafnate: An emerging electronic device material
- Authors:
-
[1];
[1];
[1];
- Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377, USA
- Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377, USA, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 OHE, United Kingdom
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1226721
- Grant/Contract Number:
- FG02-08ER46526
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Name: Applied Physics Letters Journal Volume: 106 Journal Issue: 11; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Pavunny, Shojan P., Sharma, Yogesh, Kooriyattil, Sudheendran, Dugu, Sita, Katiyar, Rajesh K., Scott, James F., and Katiyar, Ram S. Holmium hafnate: An emerging electronic device material. United States: N. p., 2015.
Web. doi:10.1063/1.4915503.
Pavunny, Shojan P., Sharma, Yogesh, Kooriyattil, Sudheendran, Dugu, Sita, Katiyar, Rajesh K., Scott, James F., & Katiyar, Ram S. Holmium hafnate: An emerging electronic device material. United States. https://doi.org/10.1063/1.4915503
Pavunny, Shojan P., Sharma, Yogesh, Kooriyattil, Sudheendran, Dugu, Sita, Katiyar, Rajesh K., Scott, James F., and Katiyar, Ram S. Tue .
"Holmium hafnate: An emerging electronic device material". United States. https://doi.org/10.1063/1.4915503.
@article{osti_1226721,
title = {Holmium hafnate: An emerging electronic device material},
author = {Pavunny, Shojan P. and Sharma, Yogesh and Kooriyattil, Sudheendran and Dugu, Sita and Katiyar, Rajesh K. and Scott, James F. and Katiyar, Ram S.},
abstractNote = {},
doi = {10.1063/1.4915503},
journal = {Applied Physics Letters},
number = 11,
volume = 106,
place = {United States},
year = {Tue Mar 17 00:00:00 EDT 2015},
month = {Tue Mar 17 00:00:00 EDT 2015}
}
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https://doi.org/10.1063/1.4915503
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Works referenced in this record:
Dielectric polarizabilities of ions in oxides and fluorides
journal, January 1993
- Shannon, R. D.
- Journal of Applied Physics, Vol. 73, Issue 1
Properties of the new electronic device material LaGdO 3 : Properties of the new electronic device material LaGdO
journal, July 2013
- Pavunny, Shojan P.; Kumar, Ashok; Misra, Pankaj
- physica status solidi (b), Vol. 251, Issue 1
Oxide pyrochlores — A review
journal, January 1983
- Subramanian, M. A.; Aravamudan, G.; Subba Rao, G. V.
- Progress in Solid State Chemistry, Vol. 15, Issue 2
Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application
journal, March 2007
- Laha, Apurba; Osten, H. J.; Fissel, A.
- Applied Physics Letters, Vol. 90, Issue 11
Dielectric properties and electrical conduction of high-k LaGdO 3 ceramics
journal, May 2012
- Pavunny, S. P.; Thomas, R.; Kumar, A.
- Journal of Applied Physics, Vol. 111, Issue 10
Materials Fundamentals of Gate Dielectrics
book, July 2005
- Demkov, Alexander A.; Navrotsky, Alexandra
High-κ gate dielectrics: Current status and materials properties considerations
journal, May 2001
- Wilk, G. D.; Wallace, R. M.; Anthony, J. M.
- Journal of Applied Physics, Vol. 89, Issue 10
Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides
journal, September 1976
- Shannon, R. D.
- Acta Crystallographica Section A, Vol. 32, Issue 5, p. 751-767
Nuclear waste disposal—pyrochlore (A2B2O7): Nuclear waste form for the immobilization of plutonium and “minor” actinides
journal, June 2004
- Ewing, Rodney C.; Weber, William J.; Lian, Jie
- Journal of Applied Physics, Vol. 95, Issue 11
Spectroscopic Investigations of the Structural Phase Transition in Gd 2 (Ti 1 - y Zr y ) 2 O 7 Pyrochlores
journal, May 2002
- Hess, N. J.; Begg, B. D.; Conradson, S. D.
- The Journal of Physical Chemistry B, Vol. 106, Issue 18
Nonlinear capacitance variations in amorphous oxide metal-insulator-metal structures
journal, October 2007
- Blonkowski, S.
- Applied Physics Letters, Vol. 91, Issue 17
Poole-Frenkel Effect and Schottky Effect in Metal-Insulator-Metal Systems
journal, March 1967
- Simmons, John G.
- Physical Review, Vol. 155, Issue 3
Recent advances in magnetic structure determination by neutron powder diffraction
journal, October 1993
- Rodríguez-Carvajal, Juan
- Physica B: Condensed Matter, Vol. 192, Issue 1-2
Band-gap measurements of bulk and nanoscale hematite by soft x-ray spectroscopy
journal, January 2009
- Gilbert, B.; Frandsen, C.; Maxey, E. R.
- Physical Review B, Vol. 79, Issue 3
Reactive evaporation of low-defect density hafnia
journal, January 1993
- Chow, Robert; Falabella, Steve; Loomis, Gary E.
- Applied Optics, Vol. 32, Issue 28
Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
journal, April 2000
- Lee, Byoung Hun; Kang, Laegu; Nieh, Renee
- Applied Physics Letters, Vol. 76, Issue 14