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Title: The origin of deep-level impurity transitions in hexagonal boron nitride

Authors:
 [1] ;  [1] ;  [1] ;  [1]
  1. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USA
Publication Date:
OSTI Identifier:
1226689
Grant/Contract Number:
FG02-09ER46552
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 2; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English