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Title: Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

Authors:
 [1] ;  [2] ;  [3] ;  [1] ;  [4] ;  [4] ;  [4] ;  [3] ;  [5] ;  [4] ;  [1]
  1. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA
  2. Departments of Physics and Materials Science and Engineering, Boise State University, Boise, Idaho 83725, USA
  3. California NanoSystems Institute and Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
  4. Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
  5. Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany, SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, KY16 9SS, United Kingdom
Publication Date:
OSTI Identifier:
1226635
Grant/Contract Number:
AC05-06OR23100
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 25; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English