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Title: Dual-sensor technique for characterization of carrier lifetime decay transients in semiconductors

Authors:
 [1]; ORCiD logo [2];  [2];  [2]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401, USA, Lakewood Semiconductor LLC, Lakewood, Colorado 80232, USA
  2. National Renewable Energy Laboratory, Golden, Colorado 80401, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1226587
Grant/Contract Number:  
AC36-08-GO28308
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 116 Journal Issue: 21; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Ahrenkiel, R. K., Johnston, S. W., Kuciauskas, D., and Tynan, Jerry. Dual-sensor technique for characterization of carrier lifetime decay transients in semiconductors. United States: N. p., 2014. Web. doi:10.1063/1.4903213.
Ahrenkiel, R. K., Johnston, S. W., Kuciauskas, D., & Tynan, Jerry. Dual-sensor technique for characterization of carrier lifetime decay transients in semiconductors. United States. https://doi.org/10.1063/1.4903213
Ahrenkiel, R. K., Johnston, S. W., Kuciauskas, D., and Tynan, Jerry. Fri . "Dual-sensor technique for characterization of carrier lifetime decay transients in semiconductors". United States. https://doi.org/10.1063/1.4903213.
@article{osti_1226587,
title = {Dual-sensor technique for characterization of carrier lifetime decay transients in semiconductors},
author = {Ahrenkiel, R. K. and Johnston, S. W. and Kuciauskas, D. and Tynan, Jerry},
abstractNote = {},
doi = {10.1063/1.4903213},
journal = {Journal of Applied Physics},
number = 21,
volume = 116,
place = {United States},
year = {Fri Dec 05 00:00:00 EST 2014},
month = {Fri Dec 05 00:00:00 EST 2014}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.4903213

Citation Metrics:
Cited by: 4 works
Citation information provided by
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Works referenced in this record:

Simultaneous Measurement of Minority-Carrier Lifetime in Single-Crystal CdTe Using Three Transient Decay Techniques
journal, September 2014

  • Johnston, Steve; Zaunbrecher, Katherine; Ahrenkiel, Richard
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An optical technique for measuring surface recombination velocity
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A new lifetime diagnostic system for photovoltaic materials
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Transient mobility in silicon as seen by a combination of free-carrier absorption and resonance-coupled photoconductive decay
journal, March 2013

  • Feldman, Ari; Ahrenkiel, Richard; Lehman, John
  • Journal of Applied Physics, Vol. 113, Issue 10
  • DOI: 10.1063/1.4794168

Minority‐carrier lifetime and photon recycling in n ‐GaAs
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