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Title: Dual-sensor technique for characterization of carrier lifetime decay transients in semiconductors

Authors:
 [1] ;  [2] ;  [2] ;  [2]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401, USA, Lakewood Semiconductor LLC, Lakewood, Colorado 80232, USA
  2. National Renewable Energy Laboratory, Golden, Colorado 80401, USA
Publication Date:
OSTI Identifier:
1226587
Grant/Contract Number:
AC36-08-GO28308
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal Issue: 21; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English