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This content will become publicly available on November 13, 2016

Title: Application of cyclic fluorocarbon/argon discharges to device patterning

With increasing demands on device patterning to achieve smaller critical dimensions and pitches for the 5nm node and beyond, the need for atomic layer etching (ALE) is steadily increasing. In this study, a cyclic fluorocarbon/Ar plasma is successfully used for ALE patterning in a manufacturing scale reactor. Self-limited etching of silicon oxide is observed. The impact of various process parameters on the etch performance is established. The substrate temperature has been shown to play an especially significant role, with lower temperatures leading to higher selectivity and lower etch rates, but worse pattern fidelity. The cyclic ALE approach established with this work is shown to have great potential for small scale device patterning, showing self-limited etching, improved uniformity and resist mask performance.
Authors:
 [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [3] ;  [2] ;  [2] ;  [3]
  1. Univ. of Maryland, College Park, MD (United States); IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)
  2. IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)
  3. Univ. of Maryland, College Park, MD (United States)
Publication Date:
OSTI Identifier:
1224881
Grant/Contract Number:
SC0001939
Type:
Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 34; Journal Issue: 1; Journal ID: ISSN 0734-2101
Publisher:
American Vacuum Society
Research Org:
Univ. of Maryland, College Park, MD (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
plasma etching; dielectric oxides; thin films; plasma deposition; process monitoring and control