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Title: Interfacial dislocations in (111) oriented (Ba0.7Sr0.3)TiO3 films on SrTiO3 single crystal

In this study, we have investigated the interfacial structure of epitaxial (Ba,Sr)TiO3 films grown on (111)-oriented SrTiO3 single-crystal substrates using transmission electron microscopy (TEM) techniques. Compared with the (100) epitaxial perovskite films, we observe dominant dislocation half-loop with Burgers vectors of a<110> comprised of a misfit dislocation along <112>, and threading dislocations along <110> or <100>. The misfit dislocation with Burgers vector of a <110> can dissociate into two ½ a <110> partial dislocations and one stacking fault. We found the dislocation reactions occur not only between misfit dislocations, but also between threading dislocations. Via three-dimensional electron tomography, we retrieved the configurations of the threading dislocation reactions. The reactions between threading dislocations lead to a more efficient strain relaxation than do the misfit dislocations alone in the near-interface region of the (111)-oriented (Ba0.7Sr0.3)TiO3 films.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [4] ;  [5] ;  [3] ;  [3]
  1. Nanjing Univ., Nanjing (China); Brookhaven National Lab., Upton, NY (United States)
  2. Nagoya Univ., Nagoya (Japan); Japan Science and Technology Agency, Saitama (Japan); Tokyo Institute of Technology, Yokohama (Japan)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. Tokyo Institute of Technology, Yokohama (Japan)
  5. Nanjing Univ., Nanjing (China)
Publication Date:
OSTI Identifier:
1224766
Report Number(s):
BNL--108487-2015-JA
Journal ID: ISSN 0003-6951; APPLAB; KC0403020
Grant/Contract Number:
SC00112704
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
29 ENERGY PLANNING, POLICY, AND ECONOMY (Ba0.7Sr0.3)TiO3; interfacial dislocations; STEM; Center for Functional Nanomaterials; dislocations; epitaxy; thin film structure; dielectric thin films; stacking faults