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Title: Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties

Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [3] ;  [2] ;  [1]
  1. Harvard University, Cambridge, Massachusetts 02138, USA
  2. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
  3. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA, Duke University, Durham, North Carolina 27708, USA
Publication Date:
OSTI Identifier:
1224302
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 20; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English