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Title: Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

Authors:
 [1] ;  [2] ;  [1] ;  [2] ;  [1] ;  [3] ;  [4] ;  [5] ;  [6] ;  [3] ;  [2] ;  [4] ;  [2]
  1. CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz, France
  2. Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz, France
  3. CNRS, UPR LPN, Route de Nozay, 91460 Marcoussis, France
  4. Université de Lorraine, Supélec, LMOPS, EA4423, 57070 Metz, France
  5. Université des Sciences et Technologies de Lille, CNRS, UMR 8520 IEMN, 59000 Lille, France
  6. Advanced Photon Source, 9700 S. Cass Avenue, Argonne, Illinois 60439, USA
Publication Date:
OSTI Identifier:
1224255
Grant/Contract Number:
AC02-06CH11357
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal Issue: 16; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English