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This content will become publicly available on October 20, 2016

Title: Designing Ferroelectric Field-Effect Transistors Based on the Polarization-Rotation Effect for Low Operating Voltage and Fast Switching

Authors:
;
Publication Date:
OSTI Identifier:
1224140
Grant/Contract Number:
FG02-07ER15920
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 4; Journal Issue: 4; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English