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Title: Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [3] ;  [3] ;  [3] ;  [3]
  1. Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA
  2. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA
  3. Technical University of Berlin, Institute for Solid State Physics, Berlin D-10623, Germany
Publication Date:
OSTI Identifier:
1223050
Grant/Contract Number:
FC26-08NT01580
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English