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Title: Radiation Tolerance of 65nm CMOS Transistors

We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately -20°C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.
Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [1]
  1. Univ. of Colorado, Boulder, CO (United States)
  2. Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Publication Date:
OSTI Identifier:
1221237
Report Number(s):
FERMILAB-PUB--15-014-E
Journal ID: ISSN 1748-0221; arXiv eprint number arXiv:1501.05966
Grant/Contract Number:
AC02-07CH11359
Type:
Accepted Manuscript
Journal Name:
Journal of Instrumentation
Additional Journal Information:
Journal Volume: 10; Journal Issue: 12; Journal ID: ISSN 1748-0221
Publisher:
Institute of Physics (IOP)
Research Org:
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY radiation-hard electronics; front-end electronics for detector readout