Compensation mechanism of bromine dopants in cadmium telluride single crystals
Abstract
We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻Cd, Cd²⁺i, V²⁺Te, Te²⁻i), and substitutional ones (Br⁰Te, Br⁺Te), as well as complexes of point defects, i.e., (Br⁺Te V²⁻Cd)⁻ and (2Br⁺Te V²⁻Cd)⁰. We established the concentration dependence between free charge carriers and the parameters of the annealing process. Here, n(T) and n(PCd) are determined by two dominant defects – Br⁺Te and (2Br⁺Te V²⁻Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.
- Authors:
-
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Yuriy Fed'kovych Chernivtsi National Univ., Chernivtsi (Ukraine)
- "Vasyl Stefanyk Precarpathian National Univ.", Ivano-Frankivsk (Ukraine)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22); USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation
- OSTI Identifier:
- 1213357
- Alternate Identifier(s):
- OSTI ID: 1246389
- Report Number(s):
- BNL-108061-2015-JA
Journal ID: ISSN 0022-0248; NN2001; TRN: US1500638
- Grant/Contract Number:
- SC00112704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Crystal Growth
- Additional Journal Information:
- Journal Volume: 415; Journal Issue: C; Journal ID: ISSN 0022-0248
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; computer simulation; point defects; Bridgman technique; semiconducting cadmium compounds
Citation Formats
Bolotnikov, A. E., Fochuk, P. M., Verzhak, Ye. V., Parashchuk, T. O., Freik, D. M., Panchuk, O. E., James, R. B., and Gorichok, I. V. Compensation mechanism of bromine dopants in cadmium telluride single crystals. United States: N. p., 2015.
Web. doi:10.1016/j.jcrysgro.2014.11.005.
Bolotnikov, A. E., Fochuk, P. M., Verzhak, Ye. V., Parashchuk, T. O., Freik, D. M., Panchuk, O. E., James, R. B., & Gorichok, I. V. Compensation mechanism of bromine dopants in cadmium telluride single crystals. United States. https://doi.org/10.1016/j.jcrysgro.2014.11.005
Bolotnikov, A. E., Fochuk, P. M., Verzhak, Ye. V., Parashchuk, T. O., Freik, D. M., Panchuk, O. E., James, R. B., and Gorichok, I. V. Fri .
"Compensation mechanism of bromine dopants in cadmium telluride single crystals". United States. https://doi.org/10.1016/j.jcrysgro.2014.11.005. https://www.osti.gov/servlets/purl/1213357.
@article{osti_1213357,
title = {Compensation mechanism of bromine dopants in cadmium telluride single crystals},
author = {Bolotnikov, A. E. and Fochuk, P. M. and Verzhak, Ye. V. and Parashchuk, T. O. and Freik, D. M. and Panchuk, O. E. and James, R. B. and Gorichok, I. V.},
abstractNote = {We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻Cd, Cd²⁺i, V²⁺Te, Te²⁻i), and substitutional ones (Br⁰Te, Br⁺Te), as well as complexes of point defects, i.e., (Br⁺Te V²⁻Cd)⁻ and (2Br⁺Te V²⁻Cd)⁰. We established the concentration dependence between free charge carriers and the parameters of the annealing process. Here, n(T) and n(PCd) are determined by two dominant defects – Br⁺Te and (2Br⁺Te V²⁻Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.},
doi = {10.1016/j.jcrysgro.2014.11.005},
journal = {Journal of Crystal Growth},
number = C,
volume = 415,
place = {United States},
year = {Fri Jan 02 00:00:00 EST 2015},
month = {Fri Jan 02 00:00:00 EST 2015}
}
Web of Science
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Works referencing / citing this record:
Bromine‐Induced Defects in Anion‐Deficient Zinc Oxide as Stable Photocatalysis Promoters
journal, December 2018
- Meethal, Bhabhina Ninnora; Swaminathan, Sindhu
- ChemistrySelect, Vol. 3, Issue 47