DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Compensation mechanism of bromine dopants in cadmium telluride single crystals

Abstract

We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻Cd, Cd²⁺i, V²⁺Te, Te²⁻i), and substitutional ones (Br⁰Te, Br⁺Te), as well as complexes of point defects, i.e., (Br⁺Te V²⁻Cd)⁻ and (2Br⁺Te V²⁻Cd)⁰. We established the concentration dependence between free charge carriers and the parameters of the annealing process. Here, n(T) and n(PCd) are determined by two dominant defects – Br⁺Te and (2Br⁺Te V²⁻Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.

Authors:
 [1];  [2];  [2];  [3];  [3];  [2];  [1];  [3]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Yuriy Fed'kovych Chernivtsi National Univ., Chernivtsi (Ukraine)
  3. "Vasyl Stefanyk Precarpathian National Univ.", Ivano-Frankivsk (Ukraine)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22); USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation
OSTI Identifier:
1213357
Alternate Identifier(s):
OSTI ID: 1246389
Report Number(s):
BNL-108061-2015-JA
Journal ID: ISSN 0022-0248; NN2001; TRN: US1500638
Grant/Contract Number:  
SC00112704
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 415; Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; computer simulation; point defects; Bridgman technique; semiconducting cadmium compounds

Citation Formats

Bolotnikov, A. E., Fochuk, P. M., Verzhak, Ye. V., Parashchuk, T. O., Freik, D. M., Panchuk, O. E., James, R. B., and Gorichok, I. V. Compensation mechanism of bromine dopants in cadmium telluride single crystals. United States: N. p., 2015. Web. doi:10.1016/j.jcrysgro.2014.11.005.
Bolotnikov, A. E., Fochuk, P. M., Verzhak, Ye. V., Parashchuk, T. O., Freik, D. M., Panchuk, O. E., James, R. B., & Gorichok, I. V. Compensation mechanism of bromine dopants in cadmium telluride single crystals. United States. https://doi.org/10.1016/j.jcrysgro.2014.11.005
Bolotnikov, A. E., Fochuk, P. M., Verzhak, Ye. V., Parashchuk, T. O., Freik, D. M., Panchuk, O. E., James, R. B., and Gorichok, I. V. Fri . "Compensation mechanism of bromine dopants in cadmium telluride single crystals". United States. https://doi.org/10.1016/j.jcrysgro.2014.11.005. https://www.osti.gov/servlets/purl/1213357.
@article{osti_1213357,
title = {Compensation mechanism of bromine dopants in cadmium telluride single crystals},
author = {Bolotnikov, A. E. and Fochuk, P. M. and Verzhak, Ye. V. and Parashchuk, T. O. and Freik, D. M. and Panchuk, O. E. and James, R. B. and Gorichok, I. V.},
abstractNote = {We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻Cd, Cd²⁺i, V²⁺Te, Te²⁻i), and substitutional ones (Br⁰Te, Br⁺Te), as well as complexes of point defects, i.e., (Br⁺Te V²⁻Cd)⁻ and (2Br⁺Te V²⁻Cd)⁰. We established the concentration dependence between free charge carriers and the parameters of the annealing process. Here, n(T) and n(PCd) are determined by two dominant defects – Br⁺Te and (2Br⁺Te V²⁻Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.},
doi = {10.1016/j.jcrysgro.2014.11.005},
journal = {Journal of Crystal Growth},
number = C,
volume = 415,
place = {United States},
year = {Fri Jan 02 00:00:00 EST 2015},
month = {Fri Jan 02 00:00:00 EST 2015}
}

Journal Article:

Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Effect of ${\rm Cd}_{0.9}{\rm Zn}_{0.1}{\rm Te\!:\!In}$ Crystals Annealing on Their High-Temperature Electrical Properties
journal, October 2011

  • Fochuk, P.; Grill, R.; Nakonechnyi, I.
  • IEEE Transactions on Nuclear Science, Vol. 58, Issue 5
  • DOI: 10.1109/TNS.2011.2164580

Defect engineering in CdTe, based on the total energies of elementary defects
journal, February 2001

  • Babentsov, V.; Corregidor, V.; Benz, K.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 458, Issue 1-2
  • DOI: 10.1016/S0168-9002(00)00924-4

Evidence of a deep donor in CdTe
journal, February 1992


Impurity doping and compensation mechanisms in CdTe
journal, May 2001


Native defect identification in II–VI materials
journal, April 1996


Point defects in CdTe
journal, September 2003


Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
journal, October 2002


Native defects in CdTe
journal, September 1999


The defect structure of CdTe: Hall data
journal, May 1975


Defect equilibrium in semi-insulating CdTe(Cl)
journal, November 1992

  • Höschl, P.; Moravec, P.; Franc, J.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 322, Issue 3
  • DOI: 10.1016/0168-9002(92)91200-S

Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing
journal, October 2009

  • Prokopiv, V. V.
  • Semiconductor physics, quantum electronics and optoelectronics, Vol. 12, Issue 4
  • DOI: 10.15407/spqeo12.04.412

Growth of CdTe from Te excess solution and self-compensation of doped donor
journal, June 2000


Description of anomalous centers in chlorine doped-CdTe by a non-purely electronic model
journal, January 1978


Binding energy of an electron to a three-defect-complex in CdTe
journal, April 1975


Semi-insulating Te-saturated CdTe
journal, October 2005

  • Grill, R.; Franc, J.; Hoschl, P.
  • IEEE Transactions on Nuclear Science, Vol. 52, Issue 5
  • DOI: 10.1109/TNS.2005.856801

High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method
conference, October 2012

  • Fochuk, P.; Nakonechnyi, I.; Kopach, O.
  • SPIE Optical Engineering + Applications, SPIE Proceedings
  • DOI: 10.1117/12.929035

Thermodynamics of intrinsic point defects in cadmium telluride at the boundary of the homogeneity region
journal, January 2011

  • Freik, Dmytro; Goritchok, Igor; Prokopiv, Volodymyr
  • Chemistry of Metals and Alloys, Vol. 4, Issue 3/4
  • DOI: 10.30970/cma4.0188

Modeling of Point Defects in Cl-Doped CdTe Crystals Annealed in Cd Vapor
journal, June 2005


Self-compensation in CdTe
journal, January 1974


Works referencing / citing this record:

Bromine‐Induced Defects in Anion‐Deficient Zinc Oxide as Stable Photocatalysis Promoters
journal, December 2018

  • Meethal, Bhabhina Ninnora; Swaminathan, Sindhu
  • ChemistrySelect, Vol. 3, Issue 47
  • DOI: 10.1002/slct.201802795