Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

Novikov, S. V.; Ting, M.; Yu, K. M.; Sarney, W. L.; Martin, R. W.; Svensson, S. P.; Walukiewicz, W.; Foxon, C. T.

doi:10.1016/j.jcrysgro.2014.06.042

Title: Tellurium n-type doping of highly mismatched amorphous GaN_1-xAs_x alloys in plasma-assisted molecular beam epitaxy

Abstract

In this paper we report our study on n-type Te doping of amorphous GaN_1-xAs_x layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN_1-xAs_x layers has been successfully achieved with a maximum Te concentration of 9×10²⁰ cm⁻³. Tellurium incorporation resulted in n-doping of GaN_1-xAs_x layers with Hall carrier concentrations up to 3×10¹⁹ cm⁻³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN_1-xAs_x layers has been determined.

Authors:

Novikov, S. V. ^[1]; Ting, M. ^[2]; Yu, K. M. ^[3]; Sarney, W. L. ^[4]; Martin, R. W. ^[5]; Svensson, S. P. ^[4]; Walukiewicz, W. ^[3]; Foxon, C. T. ^[1]

Univ. of Nottingham (United Kingdom)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
US Army Research Lab., Adelphi, MD (United States)
Univ. of Strathclyde, Glasgow (United Kingdom)

Publication Date:: Wed Oct 01 00:00:00 EDT 2014

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1209763

Grant/Contract Number:: AC02-05CH11231

Resource Type:: Published Article

Journal Name:: Journal of Crystal Growth

Additional Journal Information:: Journal Name: Journal of Crystal Growth Journal Volume: 404 Journal Issue: C; Journal ID: ISSN 0022-0248

Publisher:: Elsevier

Country of Publication:: Netherlands

Language:: English

Citation Formats


                    Novikov, S. V., Ting, M., Yu, K. M., Sarney, W. L., Martin, R. W., Svensson, S. P., Walukiewicz, W., and Foxon, C. T. Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy.  Netherlands: N. p., 2014. 
Web.  doi:10.1016/j.jcrysgro.2014.06.042.

Copy to clipboard


                    Novikov, S. V., Ting, M., Yu, K. M., Sarney, W. L., Martin, R. W., Svensson, S. P., Walukiewicz, W., & Foxon, C. T. Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy.  Netherlands.  https://doi.org/10.1016/j.jcrysgro.2014.06.042

Copy to clipboard


                    Novikov, S. V., Ting, M., Yu, K. M., Sarney, W. L., Martin, R. W., Svensson, S. P., Walukiewicz, W., and Foxon, C. T. Wed .  
"Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy".  Netherlands.  https://doi.org/10.1016/j.jcrysgro.2014.06.042.

Copy to clipboard


                    
@article{osti_1209763,

  title        = {Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy},

  author       = {Novikov, S. V. and Ting, M. and Yu, K. M. and Sarney, W. L. and Martin, R. W. and Svensson, S. P. and Walukiewicz, W. and Foxon, C. T.},

  abstractNote = {In this paper we report our study on n-type Te doping of amorphous GaN1-xAsx layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN1-xAsx layers has been successfully achieved with a maximum Te concentration of 9×10²⁰ cm⁻³. Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3×10¹⁹ cm⁻³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN1-xAsx layers has been determined.},

  doi          = {10.1016/j.jcrysgro.2014.06.042},

  journal      = {Journal of Crystal Growth},

  number       = C,

  volume       = 404,

  place        = {Netherlands},

  year         = {Wed Oct 01 00:00:00 EDT 2014},

  month        = {Wed Oct 01 00:00:00 EDT 2014}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Publisher's Version of Record
https://doi.org/10.1016/j.jcrysgro.2014.06.042

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 3 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy
journal, March 2002

Foxon, C. T.; Harrison, I.; Novikov, S. V.
Journal of Physics: Condensed Matter, Vol. 14, Issue 13
DOI: 10.1088/0953-8984/14/13/301

Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range
journal, November 2009

Yu, K. M.; Novikov, S. V.; Broesler, R.
Journal of Applied Physics, Vol. 106, Issue 10
DOI: 10.1063/1.3259434

Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy
journal, March 2013

Yu, K. M.; Sarney, W. L.; Novikov, S. V.
Applied Physics Letters, Vol. 102, Issue 10
DOI: 10.1063/1.4795446

Valence band hybridization in $N$ -rich ${GaN}_{1 - x} {As}_{x}$ alloys
journal, September 2004

Wu, J.; Walukiewicz, W.; Yu, K. M.
Physical Review B, Vol. 70, Issue 11
DOI: 10.1103/PhysRevB.70.115214

GaN1−xSbx highly mismatched alloys grown by low temperature molecular beam epitaxy under Ga-rich conditions
journal, November 2013

Sarney, W. L.; Svensson, S. P.; Novikov, S. V.
Journal of Crystal Growth, Vol. 383
DOI: 10.1016/j.jcrysgro.2013.08.030

Molecular beam epitaxy of highly mismatched N-rich GaN1−xSbx and InN1−xAsx alloys
journal, January 2013

Novikov, Sergei V.; Yu, Kin M.; Levander, Alejandro
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 31, Issue 3
DOI: 10.1116/1.4774028

Visible-light absorption and large band-gap bowing of GaN1−xSbxfrom first principles
journal, August 2011

Sheetz, R. Michael; Richter, Ernst; Andriotis, Antonis N.
Physical Review B, Vol. 84, Issue 7
DOI: 10.1103/PhysRevB.84.075304

Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content
journal, June 2009

Novikov, S. V.; Staddon, C. R.; Akimov, A. V.
Journal of Crystal Growth, Vol. 311, Issue 13
DOI: 10.1016/j.jcrysgro.2009.04.010

n-type (Pb)Te doping of GaAs and AlxGa1−xSb grown by molecular-beam epitaxy
journal, November 1989

Newstead, S. M.; Kerr, T. M.; Wood, C. E. C.
Journal of Applied Physics, Vol. 66, Issue 9
DOI: 10.1063/1.344004

Electrical properties and photoluminescence of Te‐doped GaAs grown by molecular beam epitaxy
journal, February 1982

De‐Sheng, Jiang; Makita, Y.; Ploog, K.
Journal of Applied Physics, Vol. 53, Issue 2
DOI: 10.1063/1.330581

Growth and transport properties of p-type GaNBi alloys
journal, November 2011

Levander, Alejandro X.; Novikov, Sergei V.; Liliental-Weber, Zuzanna
Journal of Materials Research, Vol. 26, Issue 23
DOI: 10.1557/jmr.2011.376

Doping of GaN1−xAsx with high As content
journal, November 2011

Levander, A. X.; Novikov, S. V.; Liliental-Weber, Z.
Journal of Applied Physics, Vol. 110, Issue 9
DOI: 10.1063/1.3657779

Similar Records in DOE PAGES and OSTI.GOV collections:

Highly mismatched N-rich GaN{sub 1-x}Sb{sub x} films grown by low temperature molecular beam epitaxy

Journal Article Yu, K. M. ; Walukiewicz, W. ; Sarney, W. L. ; ... - Applied Physics Letters

We have grown N-rich, dilute Sb GaN{sub 1-x}Sb{sub x} alloys by low temperature molecular beam epitaxy. At low growth temperature of <100 Degree-Sign C the material loses crystallinity and becomes primarily amorphous with small crystallites of 2-5 nm at a Sb composition of >4 at. %. Despite the different microstructures found for GaN{sub 1-x}Sb{sub x} alloys with different composition, the absorption edge shifts continuously from 3.4 eV (GaN) to close to 1 eV for samples with Sb content >30 at. %. GaN{sub 1-x}Sb{sub x} alloys with less than 5 at. % Sb show sufficient bandgap reduction ({approx}2 eV), making themmore »« less
https://doi.org/10.1063/1.4795446
Kinetics of self-induced nucleation and optical properties of GaN nanowires grown by plasma-assisted molecular beam epitaxy on amorphous Al{sub x}O{sub y}

Journal Article Sobanska, M., E-mail: sobanska@ifpan.edu.pl ; Zytkiewicz, Z. R. ; Klosek, K. ; ... - Journal of Applied Physics

Nucleation kinetics of GaN nanowires (NWs) by molecular beam epitaxy on amorphous Al{sub x}O{sub y} buffers deposited at low temperature by atomic layer deposition is analyzed. We found that the growth processes on a-Al{sub x}O{sub y} are very similar to those observed on standard Si(111) substrates, although the presence of the buffer significantly enhances nucleation rate of GaN NWs, which we attribute to a microstructure of the buffer. The nucleation rate was studied vs. the growth temperature in the range of 720–790 °C, which allowed determination of nucleation energy of the NWs on a-Al{sub x}O{sub y} equal to 6 eV. Thismore »« less
https://doi.org/10.1063/1.4935522
Strain relaxation in GaN/Al{sub x}Ga{sub 1-x}N superlattices grown by plasma-assisted molecular-beam epitaxy

Journal Article Kotsar, Y ; Bellet-Amalric, E ; Das, A ; ... - Journal of Applied Physics

We have investigated the misfit relaxation process in GaN/Al{sub x}Ga{sub 1-x}N (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 10{sup 8} cm{sup -2} to 2 x 10{sup 9} cm{sup -2}. Increasing the Al mole fractionmore »« less
https://doi.org/10.1063/1.3618680
Tellurium doping of Ga{sub 0.8}In{sub 0.2}Sb layers grown by metalorganic vapor phase epitaxy

Technical Report Ehsani, H ; Bhat, I ; Hitchcock, C ; ...

N-type Ga{sub 0.8}In{sub 0.2}Sb epitaxial layers have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) using diethyltelluride (DETe) as the dopant source. The incorporation efficiency of Te in Ga{sub 0.8}In{sub 0.2}Sb and the electron mobility were found to be higher with GaSb substrates compared to using GaAs substrates. The electron concentration increased from 5 {times} 10{sup 16} cm{sup {minus}3} to 1.5 {times} 10{sup 18} cm{sup {minus}3} as the Te concentration was increased from 1 {times} 10{sup 17} cm{sup {minus}3} to 5 {times} 10{sup 18} cm{sup {minus}3}. As the Te concentration was increased further, the electronmore »« less
https://doi.org/10.2172/307974

Full Text Available
Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

Journal Article Gunning, Brendan P. ; Clinton, Evan A. ; Merola, Joseph J. ; ... - Journal of Applied Physics

Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N{sub 2} while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N{sub 2} and 7.7 sccm Ar flows at 600 W radio frequency power, for which themore »« less
https://doi.org/10.1063/1.4933278

Similar Records

Title: Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

Abstract

Citation Formats

The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy journal, March 2002

Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range journal, November 2009

Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy journal, March 2013

Valence band hybridization in N -rich GaN 1 − x As x alloys journal, September 2004

GaN1−xSbx highly mismatched alloys grown by low temperature molecular beam epitaxy under Ga-rich conditions journal, November 2013

Molecular beam epitaxy of highly mismatched N-rich GaN1−xSbx and InN1−xAsx alloys journal, January 2013

Visible-light absorption and large band-gap bowing of GaN1−xSbxfrom first principles journal, August 2011

Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content journal, June 2009

n-type (Pb)Te doping of GaAs and AlxGa1−xSb grown by molecular-beam epitaxy journal, November 1989

Electrical properties and photoluminescence of Te‐doped GaAs grown by molecular beam epitaxy journal, February 1982

Growth and transport properties of p-type GaNBi alloys journal, November 2011

Doping of GaN1−xAsx with high As content journal, November 2011

Title: Tellurium n-type doping of highly mismatched amorphous GaN_1-xAs_x alloys in plasma-assisted molecular beam epitaxy

The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy
journal, March 2002

Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range
journal, November 2009

Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy
journal, March 2013

Valence band hybridization in $N$ -rich ${GaN}_{1 - x} {As}_{x}$ alloys
journal, September 2004

GaN1−xSbx highly mismatched alloys grown by low temperature molecular beam epitaxy under Ga-rich conditions
journal, November 2013

Molecular beam epitaxy of highly mismatched N-rich GaN1−xSbx and InN1−xAsx alloys
journal, January 2013

Visible-light absorption and large band-gap bowing of GaN1−xSbxfrom first principles
journal, August 2011

Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content
journal, June 2009

n-type (Pb)Te doping of GaAs and AlxGa1−xSb grown by molecular-beam epitaxy
journal, November 1989

Electrical properties and photoluminescence of Te‐doped GaAs grown by molecular beam epitaxy
journal, February 1982

Growth and transport properties of p-type GaNBi alloys
journal, November 2011

Doping of GaN1−xAsx with high As content
journal, November 2011