Three-center tight-binding potential model for C and Si
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1204696
- Grant/Contract Number:
- AC02-07CH11358
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review. B, Condensed Matter and Materials Physics
- Additional Journal Information:
- Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Volume: 92 Journal Issue: 3; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Lu, Wen-Cai, Wang, C. Z., Zhao, Li-Zhen, Qin, Wei, and Ho, K. M. Three-center tight-binding potential model for C and Si. United States: N. p., 2015.
Web. doi:10.1103/PhysRevB.92.035206.
Lu, Wen-Cai, Wang, C. Z., Zhao, Li-Zhen, Qin, Wei, & Ho, K. M. Three-center tight-binding potential model for C and Si. United States. https://doi.org/10.1103/PhysRevB.92.035206
Lu, Wen-Cai, Wang, C. Z., Zhao, Li-Zhen, Qin, Wei, and Ho, K. M. Wed .
"Three-center tight-binding potential model for C and Si". United States. https://doi.org/10.1103/PhysRevB.92.035206.
@article{osti_1204696,
title = {Three-center tight-binding potential model for C and Si},
author = {Lu, Wen-Cai and Wang, C. Z. and Zhao, Li-Zhen and Qin, Wei and Ho, K. M.},
abstractNote = {},
doi = {10.1103/PhysRevB.92.035206},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 3,
volume = 92,
place = {United States},
year = {Wed Jul 29 00:00:00 EDT 2015},
month = {Wed Jul 29 00:00:00 EDT 2015}
}
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https://doi.org/10.1103/PhysRevB.92.035206
https://doi.org/10.1103/PhysRevB.92.035206
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Cited by: 16 works
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