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Title: Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).
Authors:
 [1] ;  [1] ;  [2] ;  [1]
  1. The Molecular Foundry, Materials Science Division, Lawrence Berkeley National Laboratory, 1-Cyclotron Road, Berkeley, CA 94720, USA
  2. Department of Chemistry, University of California at Berkeley, 1-Cyclotron Road, Berkeley, CA 94720, USA
Publication Date:
OSTI Identifier:
1198251
Grant/Contract Number:
AC02-05CH11231
Type:
Published Article
Journal Name:
International Journal of Photoenergy
Additional Journal Information:
Journal Volume: 2009; Related Information: CHORUS Timestamp: 2016-08-11 12:30:08; Journal ID: ISSN 1110-662X
Publisher:
Hindawi Publishing Corporation
Sponsoring Org:
USDOE
Country of Publication:
Egypt
Language:
English