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Title: Memory and Spin Injection Devices Involving Half Metals

We suggest memory and spin injection devices fabricated with half-metallic materials and based on the anomalous Hall effect. Schematic diagrams of the memory chips, in thin film and bulk crystal form, are presented. Spin injection devices made in thin film form are also suggested. These devices do not need any external magnetic field but make use of their own magnetization. Only a gate voltage is needed. The carriers are 100% spin polarized. Memory devices may potentially be smaller, faster, and less volatile than existing ones, and the injection devices may be much smaller and more efficient than existing spin injection devices.
Authors:
 [1] ;  [1] ;  [1] ;  [1]
  1. Department of Physics, University of California, Davis, CA 95616-8677, USA
Publication Date:
OSTI Identifier:
1198038
Grant/Contract Number:
AC52-07NA27344
Type:
Published Article
Journal Name:
Journal of Nanomaterials
Additional Journal Information:
Journal Volume: 2011; Related Information: CHORUS Timestamp: 2016-08-04 07:47:43; Journal ID: ISSN 1687-4110
Publisher:
Hindawi Publishing Corporation
Sponsoring Org:
USDOE
Country of Publication:
Egypt
Language:
English