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Title: Mixed-RKDG Finite Element Methods for the 2-D Hydrodynamic Model for Semiconductor Device Simulation

In this paper we introduce a new method for numerically solving the equations of the hydrodynamic model for semiconductor devices in two space dimensions. The method combines a standard mixed finite element method, used to obtain directly an approximation to the electric field, with the so-called Runge-Kutta Discontinuous Galerkin (RKDG) method, originally devised for numerically solving multi-dimensional hyperbolic systems of conservation laws, which is applied here to the convective part of the equations. Numerical simulations showing the performance of the new method are displayed, and the results compared with those obtained by using Essentially Nonoscillatory (ENO) finite difference schemes. From the perspective of device modeling, these methods are robust, since they are capable of encompassing broad parameter ranges, including those for which shock formation is possible. The simulations presented here are for Gallium Arsenide at room temperature, but we have tested them much more generally with considerable success.
Authors:
 [1] ;  [2] ;  [3] ;  [4]
  1. Department of Mathematics and the Institute for Scientific Computation, Texas A&M University, College Station, TX 77843, USA
  2. School of Mathematics, , University of Minnesota, Minneapolis, Minnesota 55455, USA
  3. Department of Mathematics, Northwestern University, Evanston, IL 60208, USA
  4. Division of Applied Mathematics, Brown University, Providence, RI 02912, USA
Publication Date:
OSTI Identifier:
1197937
Grant/Contract Number:
ACOS-840R21400
Type:
Published Article
Journal Name:
VLSI Design
Additional Journal Information:
Journal Volume: 3; Journal Issue: 2; Related Information: CHORUS Timestamp: 2016-08-22 12:34:14; Journal ID: ISSN 1065-514X
Publisher:
Hindawi Publishing Corporation
Sponsoring Org:
USDOE
Country of Publication:
Country unknown/Code not available
Language:
English