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Title: Defect-enhanced void filling and novel filled phases of open-structure skutterudites

Here, we report the design of novel filled CoSb3 skutterudite phases based on a combination of filling and Sb-substituted Ga/In defects. Ga/In doped skutterudite phases with Li-, Nd-, and Sm-fillings can be formed via this strategy, which can have relatively wider ranges of carrier concentration than other conventional filled skutterudite phases.
Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [3] ;  [4]
  1. Chinese Academy of Sciences, Shanghai (China)
  2. Chinese Academy of Sciences, Shanghai (China); Shanghai Univ., Shanghai (China)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  4. Univ. of Washington, Seattle, WA (United States)
Publication Date:
OSTI Identifier:
1195811
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
ChemComm
Additional Journal Information:
Journal Volume: 51; Journal Issue: 54; Journal ID: ISSN 1359-7345
Publisher:
Royal Society of Chemistry
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English