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Title: Electrically Tunable Magnetism in Magnetic Topological Insulators

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1194270
Grant/Contract Number:  
AC02-76SF00515
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 115 Journal Issue: 3; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Wang, Jing, Lian, Biao, and Zhang, Shou-Cheng. Electrically Tunable Magnetism in Magnetic Topological Insulators. United States: N. p., 2015. Web. doi:10.1103/PhysRevLett.115.036805.
Wang, Jing, Lian, Biao, & Zhang, Shou-Cheng. Electrically Tunable Magnetism in Magnetic Topological Insulators. United States. https://doi.org/10.1103/PhysRevLett.115.036805
Wang, Jing, Lian, Biao, and Zhang, Shou-Cheng. Tue . "Electrically Tunable Magnetism in Magnetic Topological Insulators". United States. https://doi.org/10.1103/PhysRevLett.115.036805.
@article{osti_1194270,
title = {Electrically Tunable Magnetism in Magnetic Topological Insulators},
author = {Wang, Jing and Lian, Biao and Zhang, Shou-Cheng},
abstractNote = {},
doi = {10.1103/PhysRevLett.115.036805},
journal = {Physical Review Letters},
number = 3,
volume = 115,
place = {United States},
year = {Tue Jul 14 00:00:00 EDT 2015},
month = {Tue Jul 14 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevLett.115.036805

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Cited by: 52 works
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